upa1853 Renesas Electronics Corporation., upa1853 Datasheet - Page 3

• Manufacturer Part Number: upa1853
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
1.8
1.6
1.4
1.2
80
60
40
20
10
2
8
6
4
0
2
1
50
0
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
30
0.2
ch
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
V
A
GS
0
- Channel Temperature - ˚C
DS
- Ambient Temperature - ˚C
= 10 V
- Drain to Source Voltage - V
0.4
60
50
90
0.6
4.5 V
A
100
= 25°C)
V
I
120
0.8
D
DS
4.0 V
= 1 mA
= 10 V
Data Sheet D12968EJ2V0DS
150
150
1
0.0001
0.001
0.01
0.01
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0
0.1
Single Pulse
Mounted on Ceramic
Substrate of 5000mm x 1.1mm
P
V
FORWARD BIAS SAFE OPERATING AREA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
D
DS
(FET1) : P
= 10 V
V
TRANSFER CHARACTERISTICS
DS
V
GS
1.0
- Drain to Source Voltage - V
D
(FET2) = 1:1
- Gate to Source Voltage - V
1.0
1
I
D
- Drain Current - A
2
2.0
T
A
125 ˚C
= 25 ˚C
25 ˚C
75 ˚C
10.0
10
V
3.0
DS
= 10 V
PA1853
100.0
100
4.0
3