k9f5608u0m-yib0 Samsung Semiconductor, Inc., k9f5608u0m-yib0 Datasheet - Page 7

• Manufacturer Part Number: k9f5608u0m-yib0
• Description: Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

AC TEST CONDITION
(K9F5608U0M-YCB0 :TA=0 to 70 C, K9F5608U0M-YIB0:TA=-40 to 85 C, VCC=2.7V~3.6V unless otherwise)
K9F5608U0M-YCB0,K9F5608U0M-YIB0
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
Program/Erase Characteristics
MODE SELECTION
NOTE : 1. X can be V
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (3.0V +/-10%)
Output Load (3.3V +/-10%)
Valid Block Number
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
to access these invalid blocks for program and erase.
CLE
H
H
X
X
X
X
L
L
L
L
L
K9F5608U0M
2. WP should be biased to CMOS high or CMOS low for standby.
3. When GND input is high, spare area is deselected.
Parameter
ALE
Item
X
H
H
X
X
X
L
L
L
L
L
(1)
IL
Parameter
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
or V
(
T
Parameter
A
IH.
=25 C, V
CE
H
X
X
X
L
L
L
L
L
L
L
CC
WE
H
H
X
X
X
X
=3.3V, f=1.0MHz)
Symbol
Symbol
N
C
C
I/O
VB
IN
Spare Array
Main Array
RE
H
H
H
H
H
H
X
X
X
X
Test Condition
Refer to the attached technical notes for a appropriate management of invalid blocks.
0V/V
GND
L/H
L/H
L/H
L/H
V
V
X
X
X
X
X
X
2013
CC
IN
Min
IL
(3)
(3)
(3)
(3)
Symbol
=0V
=0V
(2)
t
t
PROG
Nop
BERS
7
0V/V
WP
H
H
H
H
H
X
X
X
X
L
CC
(2)
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
Data Input
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
Min
Read Mode
Write Mode
Typ.
-
-
-
-
Min
-
-
-
0.4V to 2.4V
Value
1.5V
5ns
Typ
200
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
2
-
-
FLASH MEMORY
2048
Max
Max
10
10
Mode
Max
500
2
3
3
Blocks
Unit
Unit
. Do not try
pF
pF
cycles
cycles
Unit
ms
s