k6f2016u4e-f Samsung Semiconductor, Inc., k6f2016u4e-f Datasheet

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k6f2016u4e-f

Manufacturer Part Number
k6f2016u4e-f
Description
128k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K6F2016U4E Family
Document Title
Revision History
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
Revision No.
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
0.0
1.0
2.0
History
Initial Draft
Finalize
Revise
- Change I
- Change I
- Remove "A1 Index Mark" of 48-TBGA package bottom side
- Changed 48-TBGA vertical dimension
E1(Typical) 0.55mm to 0.58mm
E2(Typical) 0.35mm to 0.32mm
CC2
CC2
from 21 to 26mA for 55ns product.
from 17 to 20mA for 70ns product.
- 1 -
Draft Date
February 21, 2001
April 30, 2001
September 27, 2001
CMOS SRAM
September 2001
Remark
Preliminary
Final
Final
Revision 2.0

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k6f2016u4e-f Summary of contents

Page 1

... K6F2016U4E Family Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalize - Change I from 21 to 26mA for 55ns product. CC2 - Change I from 17 to 20mA for 70ns product. CC2 - Remove "A1 Index Mark" of 48-TBGA package bottom side 2 ...

Page 2

... Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00 PRODUCT FAMILY Product Family Operating Temperature K6F2016U4E-F Industrial(-40~ The parameter is measured with 30pF test load. 2. Typical values are measured at V =3.0V, T =25 C and not 100% tested. CC ...

Page 3

... K6F2016U4E Family PRODUCT LIST Part Name K6F2016U4E-EF55 K6F2016U4E-EF70 FUNCTIONAL DESCRIPTION means don t care.(Must be low or high state.) ...

Page 4

... K6F2016U4E Family RECOMMENDED DC OPERATING CONDITIONS Item Supply voltage Ground Input high voltage Input low voltage Note =- otherwise specified Overshoot: Vcc+2.0V in case of pulse width 20ns. 3. Undershoot: -2.0V in case of pulse width 20ns. 4. Overshoot and undershoot are sampled, not 100% tested. ...

Page 5

... K6F2016U4E Family AC OPERATING CONDITIONS TEST CONDITIONS (Test Load and Test Input/Output Reference) Input pulse level: 0.4 to 2.2V Input rising and falling time: 5ns Input and output reference voltage: 1.5V Output load (See right): C =100pF+1TTL L C =30pF+1TTL L AC CHARACTERISTICS (Vcc=2.7~3.3V, Industrial product:T Parameter List Read Cycle Time ...

Page 6

... K6F2016U4E Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) Address Data Out Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) Address CS UB Data out High-Z NOTES (READ CYCLE and are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage ...

Page 7

... K6F2016U4E Family TIMING WAVEFORM OF WRITE CYCLE(1) Address CS UB Data in High-Z Data Undefined Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address CS UB Data in Data out (WE Controlled CW( WP(1) t AS( WHZ (CS Controlled CW(2) AS( WP( Data Valid ...

Page 8

... K6F2016U4E Family TIMING WAVEFORM OF WRITE CYCLE(3) Address CS UB Data in Data out High-Z NOTES (WRITE CYCLE wri e occurs during the overlap low CS and low WE. A write begins when CS goes low and WE goes low with asserting for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi- tion when CS goes high and WE goes high ...

Page 9

... K6F2016U4E Family PACKAGE DIMENSION 48 TAPE BALL GRID ARRAY(0.75mm ball pitch) Top View B #A1 Side View D C Min Typ A - 0.75 B 5.90 6. 3.75 C 6.90 7. 5.25 D 0.40 0.45 E 0.80 0. 0.58 E2 0.27 0. Bottom View Max - Notes. 6.10 1. Bump counts: 48(8 row x 6 column) 2. Bump pitch: (x,y)=(0.75 x 0.75)(typ ...

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