upa2727ut1a-e2-az Renesas Electronics Corporation., upa2727ut1a-e2-az Datasheet

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upa2727ut1a-e2-az

Manufacturer Part Number
upa2727ut1a-e2-az
Description
Switching N-channel Power Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2727UT1A-E2-AZ.pdf (6 pages)
Document No. G18300EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
FEATURES
• Low on-state resistance
• Low Q
• Thin type surface mount package with heat spreader (8-pin HVSON)
• RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE
Channel to Ambient Thermal Resistance
Channel to Case (Drain) Thermal Resistance
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
DESCRIPTION
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation (PW = 10 sec)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
The
R
R
Q
DS(on)1
DS(on)2
GD
μ
= 3.5 nC TYP. (V
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
3. Starting T
PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications.
GD
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and
quickly dissipate it once, when it has occurred.
= 9.6 mΩ MAX. (V
= 15 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
ch
s, Duty Cycle ≤ 1%
Note1
= 25°C, V
DD
Note2
Note3
= 15 V, I
Note3
DS
GS
GS
GS
= 0 V)
= 0 V)
= 4.5 V, I
= 10 V, I
DD
D
= 15 V, R
N-CHANNEL POWER MOSFET
= 16 A)
D
D
Note2
= 8 A)
= 8 A)
Note2
A
G
= 25°C, All terminals are connected.)
= 25 Ω, V
DATA SHEET
V
V
I
I
P
P
T
T
R
R
I
E
D(DC)
D(pulse)
AS
ch
stg
SWITCHING
DSS
GSS
T1
T2
AS
th(ch-A)
th(ch-C)
GS
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V, L = 100
−55 to +150
83.3
±20
±16
±96
150
1.5
4.6
2.0
30
16
26
μ
PA2727UT1A
μ
°C/W
°C/W
H
mJ
°C
°C
W
W
V
V
A
A
A
PACKAGE DRAWING (Unit: mm)
EQUIVALENT CIRCUIT
Gate
1
0.2
2
3
4
0.6 ±0.15
5.4 ±0.2
3.65 ±0.2
6 ±0.2
Source
1
Drain
8
7
6
5
0.7 ±0.15
Body
Diode
2006, 2007
1, 2, 3
4
5, 6, 7, 8: Drain
: Source
: Gate
0.10 S

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upa2727ut1a-e2-az Summary of contents

Page 1

N-CHANNEL POWER MOSFET DESCRIPTION μ The PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications. FEATURES • Low on-state resistance R = 9.6 mΩ MAX DS(on mΩ MAX 4.5 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 - Ambient Temperature - ° TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 ...

Page 4

GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 2.5 2 1.5 1 0.5 0 -75 - Channel Temperature - ° DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4.5 V ...

Page 5

DYNAMIC INPUT/OUTPUT CHARACTERISTICS Gate Charge - nC G ORDERING INFORMATION PART NUMBER LEAD PLATING Note μ PA2727UT1A-E1-AZ Note μ PA2727UT1A-E2-AZ Note μ ...

Page 6

The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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