upa2732ut1a Renesas Electronics Corporation., upa2732ut1a Datasheet

upa2732ut1a

Manufacturer Part Number

upa2732ut1a

Description

Switching P-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2732UT1A.pdf (6 pages)

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Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

upa2732ut1a-E2-AZ

Manufacturer:

NEC

Quantity:

20 000

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Document No. G17641EJ1V1DS00 (1st edition)

Date Published January 2006 NS CP(K)

Printed in Japan

FEATURES

• Low on-state resistance

• Low C

• Small and surface mount package (8pin HVSON)

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in external electrode.)

ABSOLUTE MAXIMUM RATINGS (T

are connected.)

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

DESCRIPTION

for power management applications of notebook computers and Li-ion

battery protection circuit.

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW =10 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

The

DS(on)1

DS(on)2

PA2732UT1A-E1-AZ

PA2732UT1A-E2-AZ

2. Mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm)

3. Starting T

PA2732UT1A is P-channel MOS Field Effect Transistor designed

iss

= 3.7 mΩ MAX. (V

= 6.7 mΩ MAX. (V

: C

PART NUMBER

degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,

and quickly dissipate it once, when it has occurred.

iss

= 3280 pF TYP.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

Note2

Note

Note3

= 0 V)

= −10 V, I

= −4.5 V, I

= −15 V, R

P-CHANNEL POWER MOSFET

Note2

= −20 A)

8pin HVSON

DATA SHEET

PACKAGE

D(pulse)

= 25 Ω, L = 100

= 25°C, All terminals

D(DC)

DSS

GSS

stg

SWITCHING

MOS FIELD EFFECT TRANSISTOR

−55 to +150

m160

−30

m20

m40

150

−20

1.5

4.6

H, V

= −20 → 0 V

PA2732UT1A

°C

PACKAGE DRAWING (Unit: mm)

0.2

0.6 ±0.15

5.4 ±0.2

3.65 ±0.2

6 ±0.2

EQUIVALENT CIRCUIT

Gate

0.7 ±0.15

1, 2, 3

5, 6, 7, 8: Drain

Source

Drain

: Source

: Gate

Body

Diode

0.10 S

2005

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upa2732ut1a Summary of contents

Page 1

DESCRIPTION The μ PA2732UT1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance = − 3.7 mΩ MAX. (V DS(on)1 GS ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

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upa2732ut1a Renesas Electronics Corporation., upa2732ut1a Datasheet

upa2732ut1a

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