upa2350t1p Renesas Electronics Corporation., upa2350t1p Datasheet

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upa2350t1p

Manufacturer Part Number
upa2350t1p
Description
Dual Nch Mosfet For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2350T1P.pdf (9 pages)
Document No. G19739EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
DESCRIPTION
Lithium-Ion battery protection circuit.
(EFLIP).
FEATURES
•
•
•
•
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
Remark "-E4" indicates the unit orientation (E4 only).
ABSOLUTE MAXIMUM RATINGS (T
Source to Source Voltage (V
Gate to Source Voltage (V
Source Current (DC)
Source Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. Mounted on ceramic board of 50 cm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
The
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
μ
Monolithic Dual MOSFET
The Drain connection on circuit board is unnecessary, because
Drains of 2MOSFET are internally connected.
2.5 V drive available and low on-state resistance
R
R
R
R
Built-in G-S protection diode against ESD
Pb-free Bump
PA2350T1P-E4-A
SS(on)1
SS(on)2
SS(on)3
SS(on)4
PART NUMBER
μ
2. PW ≤ 100
PA2350T1P is a Dual N-channel MOSFET designed for
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
= 35 mΩ MAX. (V
= 37 mΩ MAX. (V
= 44 mΩ MAX. (V
= 55 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Note
μ
Note1
s, Single Pulse
Note2
Note1
SS
GS
= 0 V)
GS
GS
GS
GS
= 0 V)
= 4.5 V, I
= 4.0 V, I
= 3.1 V, I
= 2.5 V, I
4-pin EFLIP-LGA
PACKAGE
S
S
S
S
V
V
I
I
P
T
T
= 3.0 A)
= 3.0 A)
= 3.0 A)
= 3.0 A)
A
S(DC)
S(pulse)
ch
stg
SSS
GSS
T
= 25°C)
DUAL Nch MOSFET
2
x 1.0 mm
FOR SWITCHING
DATA SHEET
−55 to +150
±12
±60
150
6.0
1.3
20
MOS FIELD EFFECT TRANSISTOR
°C
°C
W
V
V
A
A
1-pin index mark S1
μ
OUTLINE DRAWING (Unit: mm)
PA2350T1P
Source1
1.62 ± 0.05
TOP VIEW
FET1
Gate1
EQUIVALENT CIRCUIT
Dot area (For in-house)
Body Diode
0.2 ± 0.05
BOTTOM VIEW
G1
G2
FET2
Gate2
0.65
Source2
S1
S2
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
Gate
Protection
Diode
4 -
2009
φ
0.3
0.65

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upa2350t1p Summary of contents

Page 1

DESCRIPTION μ The PA2350T1P is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection (EFLIP). FEATURES • Monolithic Dual MOSFET The Drain connection on circuit board is unnecessary, because Drains of ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Source Current I SSS Gate Leakage Current I GSS Gate to Source Cut-off Voltage V GS(off) Note Forward Transfer Admittance | y fs Source to Source On-state R SS(on)1 Note Resistance R ...

Page 3

TEST CIRCUIT 5 R SS(on TEST CIRCUIT 7 C iss Capacitance Capacitance Bridge Bridge S1 S1 TEST ...

Page 4

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA 100 R Limited ...

Page 5

SOURCE CURRENT vs. SOURCE TO SOURCE VOLTAGE 2.5 V TEST CIRCUIT 5 10 Pulsed Source to Source Voltage - V ...

Page 6

SOURCE TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 TEST CIRCUIT 3 Pulsed 3 100 T - ...

Page 7

Example of application circuit > Lithium-Ion battery (1 cell) protection circuit Lithium-Ion battery pack Lithium-Ion battery pack Lithium- Lithium- Ion battery Ion battery cell cell <Notes for using this device safely> When you use this device, in order to ...

Page 8

Figure 1 Recommended soldering conditions of INFRARED REFLOW Maximum temperature (Package's surface temperature) Time at maximum temperature Time of temperature higher than 220°C Preheating time at 160 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux ...

Page 9

The information in this document is current as of April, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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