h5ps1g43efr Hynix Semiconductor, h5ps1g43efr Datasheet - Page 21

• Manufacturer Part Number: h5ps1g43efr
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.1 / May 2008
4. Electrical Characteristics & AC Timing Specification
( T
Refresh Parameters by Device Density
Note :
1: If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be
executed.
2. This is an optional feature. For detailed information, please refer to “operating temperature condition” in this data sheet.
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Note :
1. 8 bank device Precharge All Allowance : tRP for a Precharge All command for an 8 Bank device will equal to tRP+1*tCK, where tRP
are the values for a single bank Precharge, which are shown in the table above.
2. Refer to Specific Notes 32.
3. Refer to Specific Notes 3.
Bin(CL-tRCD-tRP)
OPER
Refresh to Active/Refresh
CAS Latency
Parameter
Average periodic
refresh interval
command time
Speed
; V
tRCD
tRP
tRAS
Parameter
tRC
DDQ
*1
= 1.8 +/- 0.1V; V
5-5-5
12.5
12.5
57.5
min
45
5
DDR2-800
tREFI
DD
= 1.8 +/- 0.1V)
0 ℃≤ T
85℃＜ T
℃
6-6-6
min
15
15
45
60
6
Symbol
tRFC
CASE
CASE
4-4-4
≤ 85℃
≤ 95
min
12
12
45
57
4
DDR2-667
256Mb 512Mb 1Gb
7.8
3.9
75
5-5-5
min
15
15
45
60
5
105
7.8
3.9
DDR2-533 DDR2-400 Units Notes
4-4-4
127.5
min
15
15
45
60
4
7.8
3.9
2Gb
195
7.8
3.9
3-3-3
min
15
15
40
55
3
327.5
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
4Gb Units Notes
7.8
3.9
tCK
ns
ns
ns
ns
ns
us
us
2,3
1,2
2
2
2
1
1