STT3981_10 SECOS [SeCoS Halbleitertechnologie GmbH], STT3981_10 Datasheet
STT3981_10
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STT3981_10 Summary of contents
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Elektronische Bauelemente DESCRIPTION The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications. FEATURES Low On-Resistance Low Gate Charge PACKAGE DIMENSIONS ABSOLUTE MAXIMUM RATINGS ...
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Elektronische Bauelemente ELECTRICAL CHARACTERISTICS Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Drain-Source Leakage Current (Tj=25℃) Drain-Source Leakage Current (Tj=70℃) Drain-Source On-Resistance Forward Transconductance 2 Diode Forward Voltage 2 Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge 2 ...
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Elektronische Bauelemente CHARACTERISTIC CURVES Output Characteristics Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0 1 0.5 0.4 0 ...
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Elektronische Bauelemente Source-Drain Diode Forward Voltage 150 0.1 0.00 0.3 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.3 0.2 0 250 A D 0.0 - 0 ...
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Elektronische Bauelemente 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. 10-Feb-2010 Rev. C Normalized ...