STT6405_09 SECOS [SeCoS Halbleitertechnologie GmbH], STT6405_09 Datasheet
STT6405_09
Manufacturer Part Number
STT6405_09
Description
P-Channel Enhancement Mode Mos.FET
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.STT6405_09.pdf
(3 pages)
28-Oct-2009 Rev. B
DESCRIPTION
FEATURES
MARKING CODE
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25℃)
Drain-Source Leakage Current (Tj=55℃)
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Resistance- Junction to Ambient
The STT6405 uses advanced trench technology
to provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM applications.
D
D
6 4 0 5
P-Channel
Lower Gate Charge
Small Footprint & Low Profile Package
1
Notes:
6
D
D
5
2
G
S
3
4
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on 1 in
PARAMETER
Elektronische Bauelemente
= Date Code
2
2
2
1
PARAMETER
2
3
2
2
Gate
copper pad of FR4 board; 156℃/W when mounted on Min. copper pad.
3
A suffix of “-C” specifies halogen and lead-free
3
Max.
SYMBOL MIN TYP MAX UNIT
(T
1256
R
BV
V
A
T
T
RoHS Compliant Product
Source
I
C
I
DS(ON)
C
C
V
Drain
Q
Q
78
GS(th)
Q
SOURCE-DRAIN DIODE
Q
g
GSS
DSS
R
T
d(on)
d(off)
T
T
= 25°C unless otherwise specified)
oss
SD
iss
rss
DSS
gd
fs
gs
rr
g
r
f
g
rr
4
-1.0
-30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
P
I
I
D
D
SYMBOL
D
@T
@T
@T
T
14.7
23.5
13.4
RθJA
700
120
8.6
3.8
8.3
29
14
75
10
V
V
j
I
, T
2
5
-
-
-
-
-
-
-
DM
A
A
DS
GS
A
=25℃
=70℃
=25℃
stg
P-Channel Enhancement Mode Mos.FET
±100
-3.0
840
-1.0
50
75
18
-1
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-5.0 A, -30 V, R
m
µA
nC
nC
nA
pF
ns
ns
V
V
S
V
V
V
V
V
V
V
V
V
I
V
V
V
V
R
R
V
V
f = 1.0 MHz
f=1.0 MHz
I
I
dl/dt= 100A/µs
D
S
S
STT6405
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
L
RATINGS
= -1.0 A, V
= -5.0A, V
-55 ~ +150
= -5.0 A
= 3
= 3
= V
= -30 V, V
= -24 V, V
= -15 V
= -15 V
= -15 V
= 0, I
= ±20 V
= -10 V, I
= -4.5 V, I
= -10 V
= -10 V
= 0 V
= -5V, I
0.016
62.5
±20
-5.0
-4.2
-30
-20
REF.
D G
2
A
B
C
D
E
F
TEST CONDITIONS
GS
F
D
, I
= -250 µA
DS(ON)
D
Min.
2.70
2.60
1.40
0.30
D
GS
Millimeter
1.10 MAX.
1.90 REF.
= -250µA
GS
= -5.0A
D
A
E
D
GS
GS
=0V,
= -5.0 A
= 0 V
TSOP-6
= -4.0 A
= 0
= 0
Max.
3.10
3.00
1.80
0.50
50 mΩ Ω Ω Ω
L
B
REF.
K
G
H
K
J
L
Min.
UNIT
W/ ℃
℃/ W
0°
Millimeter
0
0.60 REF.
0.12 REF.
0.95 REF.
C
W
℃
Page 1 of 3
V
V
A
A
Max.
0.10
10°
H
J
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STT6405_09 Summary of contents
Page 1
Elektronische Bauelemente DESCRIPTION The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. FEATURES P-Channel Lower Gate Charge Small Footprint & Low ...
Page 2
Elektronische Bauelemente CHARACTERISTIC CURVES 28-Oct-2009 Rev. B STT6405 -5 mΩ Ω Ω Ω DS(ON) P-Channel Enhancement Mode Mos.FET Page ...
Page 3
Elektronische Bauelemente CHARACTERISTIC CURVES 28-Oct-2009 Rev. B STT6405 -5 mΩ Ω Ω Ω DS(ON) P-Channel Enhancement Mode Mos.FET Page ...