2mbi100ta-060 Fuji Electric holdings CO.,Ltd, 2mbi100ta-060 Datasheet

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2mbi100ta-060

Manufacturer Part Number
2mbi100ta-060
Description
600v / 100a 2 In One-package Igbt Module
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
2MBI100TA-060
Manufacturer:
FUJI
Quantity:
1 000
2MBI100TA-060
· High speed switching
· Voltage drive
· Low inductance module structure
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector
current
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
Screw torque
*
*
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Allowabe avalamche wnergy
during short circuit cutting off
(Non-repetitive)
Item
Thermal resistance
Contact Thermal resistance
*
1 :
2 :
2
Thermal resistance characteristics
: This is the value which is defined mounting on the additional cooling fin with thermal compound
Electrical characteristics (at Tj=25°C unless otherwise specified)
Recommendable value : 2.5 to 3.5 N·m(M5)
All terminals should be connected together when isolation test will be done.
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Features
Applications
Maximum ratings and characteristics
Continuous
1ms
Continuous
1ms
Symbol
V
V
I
I
-I
-I
P
T
T
V
Mounting *
Terminals *
Symbol
I
I
V
V
C
C
C
t
t
t
t
t
V
t
PAV
Rth(j-c)
Rth(j-c)
Rth(c-f)*
C
C
CES
GES
on
off
f
C
C
j
stg
r
r(j)
rr
CES
GES
C
is
Symbol
GE(th)
CE(sat)
ies
oes
res
F
pulse
pulse
2
1
1
Characteristics
Min.
Characteristics
Min.
Duty=100%
Conditions
Duty=50%
AC:1min.
1 device
Ic=1mA
6.2
55
1ms
1ms
Typ.
8500
1500
1300
Typ.
0.05
IGBT Module T-Series
6.7
1.8
2.0
0.4
0.25
0.1
0.4
0.04
1.7
2.0
600V / 100A 2 in one-package
-40 to +125
AC 2500 (1min.)
200
Max.
Rating
1.0
7.7
2.4
1.2
0.6
1.2
0.45
2.5
0.3
Max.
+150
0.400
1.02
600
±20
100
200
100
200
310
3.5
3.5
V
V
V
Chip
Terminal
V
V
f=1MHz
V
I
V
R
Chip
Terminal
Ic>200A, Tj=125°C
IGBT
FWD
With thermal compound
Conditions
C
I
F
CE
GE
CE
GE
CE
CC
GE
G
Conditions
=100A
=100A
=33 ohm
=0V, V
=20V, I
=0V, V
=0V
=10V
=300V
=±15V
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
CE
GE
C
V
=100mA
GE
=600V
=±20V
Equivalent Circuit Schematic
=15V, I
I
F
C1
=100A
C
=100A
G1 E1
IGBT Module
C2E1
Unit
°C/W
°C/W
°C/W
mA
nA
V
V
pF
µs
V
µs
mJ
Unit
G2 E2
E2

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2mbi100ta-060 Summary of contents

Page 1

... Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) ...

Page 2

... Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 300 VGE= 20V 200 100 Collector - Emitter voltage : VCE [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 300 200 100 Collector - Emitter voltage : VCE [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) ...

Page 3

... Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=33ohm, Tj= 25C 1000 100 100 Collector current : Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=+-15V, Tj= 25C 5000 1000 100 Gate resistance : Rg [ ohm ] [ Inverter ] Switching loss vs. Gate resistance (typ.) ...

Page 4

... Inverter ] Forward current vs. Forward on voltage (typ.) 200 100 Forward on voltage : Transient thermal resistance 2 1 0.1 0.01 0.001 0.01 Pulse width : Pw [ sec ] Outline Drawings, mm M232 300 Tj=125C Tj=25C 100 FWD IGBT 0.1 1 IGBT Module [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=33ohm ...

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