IDT7187L25DB IDT [Integrated Device Technology], IDT7187L25DB Datasheet

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IDT7187L25DB

Manufacturer Part Number
IDT7187L25DB
Description
CMOS STATIC RAM 64K (64K x 1-BIT)
Manufacturer
IDT [Integrated Device Technology]
Datasheet

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FEATURES:
• High speed (equal access and cycle time)
• Low power consumption
• Battery backup operation—2V data retention (L version
• JEDEC standard high-density 22-pin ceramic DIP, 22-pin
• Produced with advanced CMOS high-performance
• Separate data input and output
• Input and output directly TTL-compatible
• Military product compliant to MIL-STD-883, Class B
FUNCTIONAL BLOCK DIAGRAM
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY TEMPERATURE RANGE
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
1996 Integrated Device Technology, Inc.
— Military: 25/35/45/55/70/85ns (max.)
only)
leadless chip carrier
technology
Integrated Device Technology, Inc.
DATA
WE
CS
IN
A
A
A
A
A
A
A
SELECT
ROW
CMOS STATIC RAM
64K (64K x 1-BIT)
A
A
6.2
DESCRIPTION:
organized as 64K x 1. It is fabricated using IDT’s high-
performance, high-reliability CMOS technology. Access times
as fast as 25ns are available.
IDT7187 provide two standby modes—I
provides low-power operation; I
operation. The low-power (L) version also provides the capa-
bility for data retention using battery backup. When using a 2V
battery, the circuit typically consumes only 30 W.
asynchronous operation, along with matching access and
cycle times. The device is packaged in an industry standard
22-pin, 300 mil ceramic DIP, or 22-pin leadless chip carriers.
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
The IDT7187 is a 65,536-bit high-speed static RAM
Both the standard (S) and low-power (L) versions of the
Ease of system design is achieved by the IDT7187 with full
Military grade product is manufactured in compliance with
MEMORY ARRAY
A
COLUMN I/O
65,536-BIT
A
A
A
A
SB1
provides ultra-low-power
V
2986 drw 01
GND
CC
SB
DATA
AUGUST 1996
IDT7187S
IDT7187L
and I
OUT
SB1
. I
1
2986/7
SB

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IDT7187L25DB Summary of contents

Page 1

Integrated Device Technology, Inc. FEATURES: • High speed (equal access and cycle time) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation—2V data retention (L version only) • JEDEC standard high-density 22-pin ceramic DIP, 22-pin leadless chip ...

Page 2

IDT7187S/L CMOS STATIC RAM 64K (64K x 1-BIT) PIN CONFIGURATIONS D22 DATA 9 OUT WE 10 ...

Page 3

IDT7187S/L CMOS STATIC RAM 64K (64K x 1-BIT) ABSOLUTE MAXIMUM RATINGS Symbol Rating Com’l. V Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 TERM with Respect to GND T Operating 0 to +70 A Temperature T Temperature –55 to +125 ...

Page 4

IDT7187S/L CMOS STATIC RAM 64K (64K x 1-BIT) DC ELECTRICAL CHARACTERISTICS ( 10 0.2V Symbol Parameter I Operating Power CC1 Supply Current Outputs Open IL ( ...

Page 5

IDT7187S/L CMOS STATIC RAM 64K (64K x 1-BIT) AC TEST CONDITIONS Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load 5V DATA OUT 255 Figure 1. AC Test Load AC ELECTRICAL CHARACTERISTICS Symbol ...

Page 6

IDT7187S/L CMOS STATIC RAM 64K (64K x 1-BIT) TIMING WAVEFORM OF READ CYCLE NO. 1 ADDRESS DATA PREVIOUS DATA VALID OUT TIMING WAVEFORM OF READ CYCLE NO DATA OUT SUPPLY CURRENT I SB NOTES: ...

Page 7

IDT7187S/L CMOS STATIC RAM 64K (64K x 1-BIT) TIMING WAVEFORM OF WRITE CYCLE NO ADDRESS DATA OUT DATA IN NOTES must be HIGH during all address transitions write ...

Page 8

IDT7187S/L CMOS STATIC RAM 64K (64K x 1-BIT) ORDERING INFORMATION IDT7187 X XX Device Power Speed Type X X Package Process/ Temperature Range B D L22 6.2 MILITARY TEMPERATURE RANGE Military (–55 ...

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