HCR1C60 HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD], HCR1C60 Datasheet
HCR1C60
Manufacturer Part Number
HCR1C60
Description
Silicon Controlled Rectifier
Manufacturer
HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
Datasheet
1.HCR1C60.pdf
(3 pages)
█ Features
█ General Description
█ Absolute Maximum Ratings
Silicon Controlled Rectifier
T
T
V
I
I
I
I
P
P
I
V
T
TSM
* Repetitive Peak Off-State Voltage :
T(AV)
2
FGM
* R.M.S On-State Current(I
* Low On-State Voltage (1.2V(Typ.)@ I
GM
G(AV)
DRM
RGM
s t g
j
t ——Circuit Fusing Considerations(t = 8.3ms) ----------------------------------------------------------- 0.9A
（
——Operating Junction Temperature --------------------------------------------------- 125℃
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
——Storage Temperature ------------------------------------------------------ －40~150℃
RMS
——Forward Peak Gate Power Dissipation (T
——Forward Peak Gate Current ------------------------------------------------------------------------------ 0.2A
——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ------------------------- 10A
Shantou Huashan Electronic Devices Co.,Ltd.
Sensitive triggering SCR is suitable for the application where
——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
——Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V
——Average On-State Current (Half Sine Wave : T
——Forward Average Gate Power Dissipation (T
）——R.M.S On-State Current（180º Conduction Angles）------------------------------------------1.0A
T(RMS)
=1A)
（T
600V
TM
a
)
=25
℃
a
=25℃） -------------------------------------------------
ｕｎｌｅｓｓ ｏｔｈｅｒｗｉｓｅ ｓｐｅｃｉｆｉｅｄ）
a
=25℃，ｔ＝８．３ｍｓ） ---------------------------------0.1W
C
= 45 ° C) ------------------------------------------0.8A
HCR1C60
0.5W
2
s
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HCR1C60 Summary of contents
Page 1
... C) ------------------------------------------0.8A C =25℃） ------------------------------------------------- a =25℃，ｔ＝８．３ｍｓ） ---------------------------------0.1W a HCR1C60 2 s 0.5W ...
Page 2
... Min. Typ. Max. Unit 10 200 1.2 1.7 200 500 0.8 1.2 0.2 2.0 5.0 10 ℃/W 50 ℃/W 160 200 V/µ s FIGURE 2 – Maximum CaseTemperture HCR1C60 Conditions DRM ℃ ℃ T =125 =1A,PEAK =6V(DC), R =100 ohm AK L ℃ T ...
Page 3
... FIGURE 3-Typical Forward Voltage(V) On-State Voltage (V) FIGURE 5-Typical Gate Trigger Voltage VS Junction Temperature Junction Temperature (° C) FIGURE 7-Typical Holding Current Junction Temperature (° C) HCR1C60 FIGURE 4-Thermal Response Time (sec) FIGURE 6-Typical Gate Trigger Current VS Junction Temperature Junction Temperature (° C) FIGURE 8-Power Dissipation ...