HD313 HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD], HD313 Datasheet
HD313
Manufacturer Part Number
HD313
Description
NPN SILICON TRANSISTOR
Manufacturer
HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
Datasheet
1.HD313.pdf
(1 pages)
█ ELECTRICAL CHARACTERISTICS（T
H
H
█ h
V
█ APPLICATIONS
█ ABSOLUTE MAXIMUM RATINGS（T
Symbol
FE（1）
FE（2）
I
I
I
V
Cob
CE(sat)
CEO
CBO
EBO
T
T
P
P
V
V
V
I
f
C
BE
C
C
t
stg
j
CBO
CEO
EBO
——Collector Current……………………………………… 3A
——Junction Temperature……………………………… 150℃
——Collector Dissipation（T
——Collector Dissipation（T
FE
Low Frequency Power Amplifier.
——Storage Temperature………………………… -55~150℃
——Collector-Emitter Voltage………………………… 60V
——Emitter-Base Voltage……………………………… 5V
——Collector-Base Voltage……………………………60V
Shantou Huashan Electronic Devices Co.,Ltd.
Classification
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Output Capacitance
60—120
Characteristics
D
c
A
=25℃）…………………… 30W
=25℃）………………… 1.75W
100—200
E
Min
60
60
a
a
=25℃）
=25℃）
0.4
Typ
65
8
Max
0.1
320
1.2
160—320
5
1
1
F
N PN S I L I C O N T R A N S I S T O R
MHz
Unit
mA
mA
mA
pF
V
V
TO-220
HD313
1―
2―Collector，C
3―Emitter, E
V
V
V
V
V
I
V
V
V
C
CE
CB
EB
CE
CE
CE
CE
CB
=2A, I
Base，B
=60V, I
=4V, I
=2V, I
=2V, I
=2V, I
=5V, I
=60V, I
=10V, I
B
Test Conditions
=0.2A
C
C
C
C
C
=0
=1A
=0.1A
=1A
=0.5A,
B
E
E
=0
=0
=0，f=1MHz
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