p2003nd5g Niko Semiconductor Co., Ltd., p2003nd5g Datasheet

no-image

p2003nd5g

Manufacturer Part Number
p2003nd5g
Description
N- & P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Niko Semiconductor Co., Ltd.
Datasheet
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE RATINGS
1
ELECTRICAL CHARACTERISTICS (T
REV 1.0
PRODUCT SUMMARY
Drain-Source Breakdown Voltage
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
Avalanche Current
Junction & Storage Temperature Range
Lead Temperature (
Continuous Drain Current
Avalanche Energy
Power Dissipation
Junction-to-Case
Junction-to-Ambient
Pulse width limited by maximum junction temperature.
N-Channel
P-Channel
THERMAL RESISTANCE
PARAMETER
PARAMETERS/TEST CONDITIONS
V
(BR)DSS
-30
30
1
/
2
16
” from case for 10 sec.)
R
20mΩ
36mΩ
DS(ON)
N- & P-Channel Enhancement Mode
-19A
25A
C
I
SYMBOL
D
= 25 °C Unless Otherwise Noted)
C
V
Field Effect Transistor
= 25 °C, Unless Otherwise Noted)
(BR)DSS
T
T
T
T
L = 0.1mH
T
T
T
T
C
C
A
A
C
C
A
A
SYMBOL
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
G1
R
R
θJC
θJA
STATIC
S1
D1
V
V
GS
GS
TEST CONDITIONS
= 0V, I
= 0V, I
1
G2
TYPICAL
D
D
SYMBOL
D2
S2
= -250μA
= 250μA
T
V
V
E
j
I
, T
I
P
T
I
DM
AS
DS
GS
D
AS
D
L
stg
N-Channel P-Channel UNITS
Halogen-Free & Lead-Free
N-Ch
P-Ch
MAXIMUM
±20
30
25
20
65
19
18
9
7
-55 to 150
42
6
275
MIN
-30
21
13
30
3
2
LIMITS
±20
-5.7
P2003ND5G
-30
-19
-15
-45
-18
TYP MAX
17
-7
G : GATE
D : DRAIN
S : SOURCE
May-21-2009
TO-252-5
UNITS
°C / W
°C / W
mJ
°C
W
V
V
A
UNIT
V

Related parts for p2003nd5g

p2003nd5g Summary of contents

Page 1

... SYMBOL TYPICAL R θJC R θ °C, Unless Otherwise Noted) C SYMBOL TEST CONDITIONS STATIC 250μ (BR)DSS -250μ P2003ND5G TO-252-5 Halogen-Free & Lead-Free G : GATE D : DRAIN S : SOURCE N-Channel P-Channel UNITS 30 -30 DS ±20 ± - ...

Page 2

... P-Channel -10V 1MHz N- rss 0V 0V 1MHz N-Channel 0. (BR)DSS P-Channel (BR)DSS - P2003ND5G Halogen-Free & Lead-Free N-Ch 1 1.7 P-Ch -1 -1.6 = ±20V N-Ch P-Ch = ±20V = 0V N- °C N- ° 10V N-Ch 65 P-Ch -45 = -10V = N-Ch ...

Page 3

... Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T Continuous Current 1 Forward Voltage Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2 Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P2003ND5G”, DATE CODE or LOT # REV 1.0 Field Effect Transistor t N-Channel d(on 20V DS t ≅ ...

Page 4

... V =10V GS I =7A D 0.00E+00 75 100 125 150 0.10 0.08 0.06 0.04 0. P2003ND5G Halogen-Free & Lead-Free Transfer Characteristics ° ° ° ...

Page 5

... DC 100 50 0 0.0001 10 100 Transient Thermal Response Curve 1.E-04 1.E-03 1.E- Square Wave Pulse Duration[sec P2003ND5G Halogen-Free & Lead-Free ° ° Source-To-Drain Voltage(V) SD SINGLE PULSE ° C/W θJC T =25° ...

Page 6

... 8.00E+03 7.00E+03 6.00E+03 5.00E+03 4.00E+03 3.00E+03 2.00E+03 1.00E+ -10V -6A D 0.00E+00 75 100 125 150 P2003ND5G Halogen-Free & Lead-Free Transfer Characteristics =125° =25° -20° 1.0 1.5 2.0 2.5 3.0 3 Gate-To-Source Voltage(V) GS Capacitance Characteristic ...

Page 7

... DC 100 50 10 100 Transient Thermal Response Curve 1.E-04 1.E-03 1.E- Square Wave Pulse Duration[sec P2003ND5G Halogen-Free & Lead-Free Source-Drain Diode Forward Voltage T =150° 0.0 0.2 0.4 0.6 0 Source-To-Drain Voltage(V) SD SINGLE PULSE 0.0001 0.001 0.01 0.1 Single Pulse Time(s) Note 1 ...

Page 8

... N- & P-Channel Enhancement Mode NIKO-SEM REV 1.0 Field Effect Transistor 8 P2003ND5G TO-252-5 Halogen-Free & Lead-Free May-21-2009 ...

Related keywords