1PS89SB15 PHILIPS [NXP Semiconductors], 1PS89SB15 Datasheet - Page 3

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1PS89SB15

Manufacturer Part Number
1PS89SB15
Description
Schottky barrier double diodes
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
1998 Nov 10
Per diode unless otherwise specified
V
I
I
I
P
T
T
T
Per diode unless otherwise specified
V
I
C
R
SYMBOL
SYMBOL
SYMBOL
F
FRM
FSM
amb
R
stg
j
amb
R
tot
F
d
th j-a
Schottky barrier double diodes
= 25 C unless otherwise specified.
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
operating ambient temperature
forward voltage
reverse current
diode capacitance
thermal resistance from junction to ambient
p
300 s;
PARAMETER
PARAMETER
PARAMETER
0.02.
t
t
T
see Fig.5
V
f = 1 MHz; V
p
p
amb
R
I
I
I
I
I
F
F
F
F
F
= 25 V; note 1; see Fig.6
1 s;
10 ms
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
note 1
3
25 C
CONDITIONS
CONDITIONS
0.5
R
= 1 V; see Fig.7
CONDITIONS
1PS89SB14; 1PS89SB15;
240
320
400
500
800
2
10
MIN.
65
65
Preliminary specification
VALUE
MAX.
500
1PS89SB16
30
200
300
600
200
+150
125
+125
MAX.
mV
mV
mV
mV
mV
pF
A
UNIT
UNIT
K/W
V
mA
mA
mA
mW
C
C
C
UNIT

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