SST5018_SOT-23 MICROSS [Micross Components], SST5018_SOT-23 Datasheet
SST5018_SOT-23
Manufacturer Part Number
SST5018_SOT-23
Description
single P-Channel JFET switch
Manufacturer
MICROSS [Micross Components]
Datasheet
1.SST5018_SOT-23.pdf
(1 pages)
SST5018 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SST5018 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SST5018 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SWITCHING TEST CIRCUIT
SST5018 SWITCHING CIRCUIT PARAMETERS
SST5018 Benefits:
Note 1 ‐ Absolute maximum ratings are limiting values above which SST5018 serviceability may be impaired.
Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
Micross Components Europe
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
This p-channel analog switch is designed to provide low
on-resistance and fast switching.
The SOT-23 package provides ease of manufacturing,
and a lower cost assembly option.
(See Packaging Information).
SST5018 Applications:
SYMBOL
SYMBOL
SYMBOL
V
V
r
r
BV
I
t
t
I
I
DS(on)
DS(on)
V
GS(off)
DS(on)
I
I
D(off)
C
V
D(on)
C
d(on)
d(off)
DGO
R
DSS
GSS
R
t
t
iss
rss
DD
GG
GSS
r
f
G
L
Low Insertion Loss
No offset or error voltage generated by closed
switch
Purely resistive
Analog Switches
Commutators
Choppers
Click To Buy
Linear Systems replaces discontinued Siliconix SST5018
Drain to Source Saturation Current (Note 2)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility
is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of Linear Integrated Systems.
Gate to Source Breakdown Voltage
910Ω
220Ω
‐6mA
12V
‐6V
Drain to Source On Resistance
Drain to Source On Resistance
Gate to Source Cutoff Voltage
Reverse Transfer Capacitance
Drain to Source On Voltage
Turn On Rise Time
Turn Off Fall Time
CHARACTERISTIC
The SST5018 is a single P-Channel JFET switch
Drain Reverse Current
Turn Off Time
Gate Reverse Current
Turn On Time
Drain Cutoff Current
Input Capacitance
CHARACTERISTIC
CHARACTERISTIC
Available Packages:
SST5018 in SOT-23
SST5018 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email:
Web:
http://www.micross.com/distribution
chipcomponents@micross.com
P-CHANNEL JFET
15
20
15
50
SST5018
MIN
MIN
‐10
30
UNITS
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
FEATURES
DIRECT REPLACEMENT FOR SILICONIX SST5018
ZERO OFFSET VOLTAGE
LOW ON RESISTANCE
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
ns
SOT-23 (Top View)
TYP.
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
chipcomponents@micross.com
MAX
MAX
‐0.5
‐10
‐10
10
75
75
45
10
‐2
‐‐
‐‐
2
UNITS
UNITS
mA
nA
µA
nA
pF
V
Ω
Ω
See Switching Circuit
CONDITIONS
V
V
GS
GS
Web:
(L) = 12V
(H) = 0V
V
www.micross.com/distribution.aspx
V
I
DS
D
DS
= 0A, V
= ‐15V, V
= 0V, V
V
V
I
V
V
V
V
I
D
V
DS
DS
G
DS
DS
GS
GS
= ‐1mA, V
DG
= 1µA, V
= ‐15V, V
= ‐15V, I
= ‐20V, V
= ‐15V, V
CONDITIONS
CONDITIONS
= 0V, I
= 15V, V
= ‐15V, I
GS
GS
GS
= 0V, f = 1kHz
= 12V, f = 1MHz
‐55°C to +200°C
‐55°C to +200°C
= 0V, f = 1MHz
D
r
I
V
= ‐6mA
V
DS(on)
D
G
DS
GS
500mW
= ‐1µA
DS
= ‐50mA
GDS
GSS
GS
GS
GS
S
= 0V
= 0V
= 0A
= 12V
= 0V
= 0V
= 7V
= 30V
= 30V
≤ 75Ω