SST5018_SOT-23 MICROSS [Micross Components], SST5018_SOT-23 Datasheet

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SST5018_SOT-23

Manufacturer Part Number
SST5018_SOT-23
Description
single P-Channel JFET switch
Manufacturer
MICROSS [Micross Components]
Datasheet
SST5018 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SST5018 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SST5018 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
                                                                                                                                                                                                              SWITCHING TEST CIRCUIT
SST5018 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
SST5018 Benefits:
Note 1 ‐  Absolute maximum ratings are limiting values above which SST5018 serviceability may be impaired.
Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
Micross Components Europe
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
This p-channel analog switch is designed to provide low
on-resistance and fast switching.
The SOT-23 package provides ease of manufacturing,
and a lower cost assembly option.
(See Packaging Information).
SST5018 Applications:
SYMBOL 
SYMBOL 
SYMBOL 
V
V
r
r
BV
I
t
t
I
I
DS(on)
DS(on)
V
GS(off)
DS(on)
I
I
D(off)
C
V
D(on)
C
d(on)
d(off)
DGO
R
DSS
GSS
R
t
t
iss
rss
DD
GG
GSS
r
f
 
 
 
 
 
G
L
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Low Insertion Loss
No offset or error voltage generated by closed
switch
Purely resistive
Analog Switches
Commutators
Choppers
Click To Buy
Linear Systems replaces discontinued Siliconix SST5018
Drain to Source Saturation Current (Note 2) 
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility
is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of Linear Integrated Systems.
Gate to Source Breakdown Voltage 
910Ω 
220Ω 
‐6mA 
12V 
‐6V 
Drain to Source On Resistance 
Drain to Source On Resistance 
Gate to Source Cutoff Voltage 
Reverse Transfer Capacitance 
 
 
 
 
 
Drain to Source On Voltage 
Turn On Rise Time 
Turn Off Fall Time 
CHARACTERISTIC 
The SST5018 is a single P-Channel JFET switch
Drain Reverse Current 
Turn Off Time 
Gate Reverse Current 
Turn On Time 
Drain Cutoff Current 
Input Capacitance 
CHARACTERISTIC 
CHARACTERISTIC 
 
 
 
 
 
 
 
 
 
 
Available Packages:
SST5018 in SOT-23
SST5018 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email:
Web:
http://www.micross.com/distribution
chipcomponents@micross.com
 
P-CHANNEL JFET
15 
20 
15 
50 
SST5018
MIN 
MIN 
‐10 
30 
UNITS 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX SST5018 
ZERO OFFSET VOLTAGE 
LOW ON RESISTANCE 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain Voltage 
Gate to Source Voltage 
 
ns 
 
 
                                                                                                                 
SOT-23 (Top View)
TYP. 
TYP. 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
chipcomponents@micross.com
MAX 
MAX 
‐0.5 
‐10 
‐10 
10 
75 
75 
45 
10 
‐2 
‐‐ 
‐‐ 
 
UNITS 
UNITS 
mA 
nA 
µA 
nA 
pF 
Ω 
Ω 
See Switching Circuit 
CONDITIONS 
V
V
GS
GS
Web:
(L) = 12V 
(H) = 0V 
 
V
www.micross.com/distribution.aspx
V
I
DS
DS
= 0A,   V
 = ‐15V, V
 = 0V, V
V
V
I
V
V
V
V
I
V
DS
DS
DS
DS
GS 
GS
= ‐1mA,   V
DG
= 1µA,   V
 = ‐15V, V
 = ‐15V, I
 = ‐20V, V
 = ‐15V, V
CONDITIONS 
CONDITIONS 
 = 0V, I
= 15V,  V
 = ‐15V, I
GS 
GS
GS 
 = 0V,   f = 1kHz 
= 12V, f = 1MHz 
‐55°C to +200°C 
‐55°C to +200°C 
= 0V, f = 1MHz 
D
r
I
V
 = ‐6mA 
V
DS(on) 
D
G
DS
GS 
500mW 
 = ‐1µA 
DS
 = ‐50mA 
GDS
GSS
GS 
GS 
GS
 = 0V 
 = 0V 
= 0A 
= 12V 
 = 0V 
= 0V 
= 7V 
 = 30V 
 = 30V 
≤ 75Ω 
 

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