hy5du561622ctp Hynix Semiconductor, hy5du561622ctp Datasheet - Page 22

• Manufacturer Part Number: hy5du561622ctp
• Description: 256m 16mx16 Gddr Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.5 / Feb. 2006
DC CHARACTERISTICS II
Operating Current
Precharge Power
Down Standby
Current
Idle Standby
Current
Active Power
Down
Standby Current
Active Standby
Current
Operating Current
Auto Refresh
Current
Self Refresh
Current
Parameter
Symbol
IDD4W
I
I
I
I
I
I
I
I
DD3N
DD4R
DD2P
DD2F
DD3P
DD1
DD5
DD6
One bank; Active - Read - Precharge;
Burst Length=4; tRC=tRC(min);
tCK=tCK(min); address and control
inputs changing once per clock cycle;
IOUT=0mA
All banks idle; Power down mode;
CKE=Low, tCK=tCK(min)
/CS=High, All banks idle;
tCK=tCK(min);
CKE=High; address and control inputs
changing once per clock cycle.
VIN=VREF for DQ, DQS and DM
One bank active; Power down mode ;
CKE=Low, tCK=tCK(min)
/CS=HIGH; CKE=HIGH; One bank;
Active-Precharge; tRC=tRAS(max);
tCK=tCK(min);
DQ, DM and DQS inputs changing twice
per clock cycle; Address and other
control inputs changing once per clock
cycle
Burst=2;Reads; Continuous burst; One
bank active; Address and control inputs
changing once per clock cycle;
tCK=tCK(min); IOUT=0mA
Burst=2; Writes; Continuous burst; One
bank active; Address and control inputs
changing once per clock cycle;
tCK=tCK(min); DQ, DM and DQS inputs
changing twice per clock cycle
tRC=tRFC(min); All banks active
CKE=<0.2V; External clock on;
tCK=tCK(min)
(TA=0 to 70
Test Condition
o
C, Voltage referenced to V
180
100
110
260
240
28
45
SS
180
100
110
260
240
33
= 0V)
45
170
100
240
220
36
90
40
Speed
20
4
1HY5DU561622CTP
160
220
200
80
35
90
4
150
200
180
70
30
80
5
150
200
180
70
30
80
6
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
22