Copyright © 1997, Power Innovations Limited, UK
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
electrical characteristics at 25°C case temperature (unless otherwise noted)
† All voltages are with respect to Main Terminal 1.
P R O D U C T
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
I
V
DRM
GTM
GTM
Sensitive Gate Triacs
4 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
5. This value applies for a maximum averaging time of 20 ms.
PARAMETER
Repetitive peak
off-state current
Peak gate trigger
current
Peak gate trigger
voltage
the rate of 160 mA/°C.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
GT
of 5 mA (Quadrants 1 - 3)
I N F O R M A T I O N
V
V
V
V
V
V
V
V
V
D
supply
supply
supply
supply
supply
supply
supply
supply
= rated V
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†
RATING
DRM
I
R
R
R
R
R
R
R
R
TEST CONDITIONS
G
L
L
L
L
L
L
L
L
= 0
= 10
= 10
= 10
= 10
= 10
= 10
= 10
= 10
MT1
MT2
G
Pin 2 is in electrical contact with the mounting base.
200 s)
T
t
t
t
t
t
t
t
t
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
TIC206M
TIC206D
TIC206S
TIC206N
C
= 110°C
> 20 s
> 20 s
> 20 s
> 20 s
> 20 s
> 20 s
> 20 s
> 20 s
TO-220 PACKAGE
DECEMBER 1971 - REVISED MARCH 1997
(TOP VIEW)
SYMBOL
I
P
V
T(RMS)
I
I
P
I
T
G(AV)
TSM
TSM
DRM
T
T
GM
GM
stg
C
L
MIN
1
2
3
SILICON TRIACS
TYP
-1.5
-0.7
-0.8
-40 to +110
-40 to +125
0.5
3.6
0.7
0.8
-2
TIC206 SERIES
VALUE
±0.2
400
600
700
800
230
1.3
0.3
25
30
4
MAX
±1
10
-5
-5
-2
-2
5
2
2
MDC2ACA
UNIT
UNIT
mA
mA
°C
°C
°C
W
W
V
A
A
A
A
V
1