atf-551m4 Avago Technologies, atf-551m4 Datasheet

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atf-551m4

Manufacturer Part Number
atf-551m4
Description
Atf-551m4 Gaas Field Effect
Manufacturer
Avago Technologies
Datasheet

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ATF-551M4
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Miniature Leadless Package
Data Sheet
Description
Avago Technologies’ ATF-551M4 is a high dynamic
range, super low noise, single supply E-pHEMT GaAs FET
housed in a thin miniature leadless package.
The combination of small device size, super low noise
(under 1 dB Fmin from 2 to 6 GHz), high linearity and
low power makes the ATF-551M4 ideal for LNA or hybrid
module designs in wireless receiver in the 450 MHz to
10 GHz frequency band.
Applications include Cellular/PCS/ WCDMA handsets
and data modem cards, fixed wireless infrastructure
in the 2.4, 3.5 GHz and UNII frequency bands, as well
as 2.4 GHz 802.11b, 5 GHz 802.11a and HIPERLAN/2
Wireless LAN PC-cards.
Note:
1. Avago’s enhancement mode E-pHEMT devices are the first com-
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and Package Marking
Source
Note:
Top View. Package marking provides orientation, product identifica-
tion and date code.
“V” = Device Type Code
“x” = Date code character. A different character is assigned for each
Pin 2
Gate
Pin 3
mercially available single-supply GaAs transistors that do not need
a negative gate bias voltage for operation. They can help simplify
the design and reduce the cost of receivers and transmitters in many
applications in the 450 MHz to 10 GHz frequency range.
month and year.
Vx
Drain
Pin 4
Source
Pin 1
Features
• Very low noise figure and high linearity
• Single Supply Enhancement Mode Technology
• Excellent uniformity in product specifications
• 400 micron gate width
• Thin miniature package 1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-reel packaging option available
Specifications
• 2 GHz; 2.7V, 10 mA (typ.)
• 24.1 dBm output 3
• 14.6 dBm output power at 1 dB gain compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Applications
• Low Noise Amplifier for:
• General purpose discrete E-pHEMT for other ultra low
optimized for 3V operation
– Cellular/PCS/WCDMA handsets and modem cards
– 2.4 GHz, 3.5 GHz and UNII fixed wireless infrastructure
– 2.4 GHz 802.11b Wireless LAN
– 5 GHz 802.11a and HIPERLAN Wireless LAN
noise applications
rd
order intercept
[1]

Related parts for atf-551m4

atf-551m4 Summary of contents

Page 1

... The combination of small device size, super low noise (under 1 dB Fmin from GHz), high linearity and low power makes the ATF-551M4 ideal for LNA or hybrid module designs in wireless receiver in the 450 MHz to 10 GHz frequency band. ...

Page 2

... ATF-551M4 Absolute Maximum Ratings Symbol Parameter V Drain-Source Voltage DS V Gate-Source Voltage GS V Gate Drain Voltage GD I Drain Current DS I Gate Current GS P Total Power Dissipation diss P RF Input Power in max. (Vd=2.7V, Id=10mA) (Vd=0V, Id=0mA) T Channel Temperature CH T Storage Temperature STG θ Thermal Resistance ...

Page 3

... Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP, and IIP measurements. This circuit represents a trade-off between an optimal noise match, maximum OIP match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements. ATF-551M4 Electrical Specifications (see notes 2 and , as indicated) Symbol Parameter and Test Condition ...

Page 4

... ATF-551M4 Typical Performance Curves 2. (mA) d [1] Figure 6. Gain vs. I and V at 900 MHz 2. (mA) d [1] Figure 9. IIP3 vs. I and V at 900 MHz ...

Page 5

... ATF-551M4 Typical Performance Curves, continued 2. (mA) d [1] Figure 11. Gain vs. I and GHz . 2. (mA) d [1] Figure 14. IIP3 vs. I and GHz . ds ds Notes: 1 ...

Page 6

... ATF-551M4 Typical Performance Curves, continued 2. FREQUENCY (GHz) [1] Figure 16. Gain vs. Bias over Frequency . 2. FREQUENCY (GHz) [1] Figure 19. IIP3 vs. Bias over Frequency . Notes: 1 ...

Page 7

... ATF-551M4 Typical Performance Curves, continued 30 -40°C 25°C 85° FREQUENCY (GHz) Figure 21. Gain vs. Temperature and [1] Frequency with Bias at 2.7V -40°C 25°C -5 85°C - FREQUENCY (GHz) Figure 24. IIP3 vs. Temperature and [1] Frequency with Bias at 2 ...

Page 8

... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.0 20.41 0.5 0.954 -29.1 19.95 0.9 0.906 -50.7 19.35 1.0 0.896 -55.7 19.18 1.5 0.833 -79.5 18.15 1.9 0.790 -96.5 17.22 2.0 0.781 -100.4 17.00 2.5 0.739 -118.5 15.84 3.0 0.710 -134.4 14.74 4.0 0.683 -160.0 12.75 5.0 0.679 -179.8 11.03 6.0 0.680 166.5 9.65 7.0 0.681 154.0 8.43 8.0 0.683 143.7 7.43 9.0 0.690 132.7 6.53 10.0 0.687 119.7 5.72 11.0 0.691 106.5 4.98 12.0 0.696 92.6 4.28 13.0 0.713 81.8 3.53 14.0 0.747 67.4 2.82 15.0 0.759 55 ...

Page 9

... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.6 21.93 0.5 0.947 -31.6 21.41 0.9 0.892 -54.7 20.67 1.0 0.880 -60.1 20.46 1.5 0.812 -84.9 19.26 1.9 0.768 -102.1 18.23 2.0 0.758 -106.1 17.98 2.5 0.718 -124.1 16.73 3.0 0.692 -139.7 15.55 4.0 0.671 -164.5 13.47 5.0 0.670 176.6 11.70 6.0 0.671 163.5 10.30 7.0 0.674 151.5 9.06 8.0 0.676 141.6 8.06 9.0 0.684 130.9 7.14 10.0 0.682 118.0 6.33 11.0 0.686 105.1 5.59 12.0 0.691 91.4 4.88 13.0 0.708 80.9 4.13 14.0 0.744 66 ...

Page 10

... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.994 -6.9 22.85 0.5 0.942 -33.3 22.27 0.9 0.882 -57.3 21.44 1.0 0.869 -62.8 21.21 1.5 0.798 -88.1 19.90 1.9 0.753 -105.5 18.79 2.0 0.744 -109.5 18.53 2.5 0.706 -127.4 17.22 3.0 0.681 -142.7 16.01 4.0 0.663 -167.0 13.88 5.0 0.664 174.6 12.09 6.0 0.666 161.9 10.68 7.0 0.670 150.1 9.43 8.0 0.673 140.4 8.42 9.0 0.681 129.8 7.51 10.0 0.678 117.1 6.68 11.0 0.682 104.3 5.94 12.0 0.688 90.6 5.23 13.0 0.706 80.3 4.48 14.0 0.743 65 ...

Page 11

... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -5.9 20.55 0.5 0.955 -28.7 20.11 0.9 0.907 -50.0 19.52 1.0 0.896 -55.0 19.36 1.5 0.833 -78.6 18.34 1.9 0.789 -95.5 17.43 2.0 0.779 -99.4 17.21 2.5 0.737 -117.4 16.07 3.0 0.707 -133.4 14.98 4.0 0.679 -159.1 13.01 5.0 0.674 -178.9 11.30 6.0 0.675 167.3 9.93 7.0 0.676 154.9 8.72 8.0 0.679 144.5 7.73 9.0 0.686 133.5 6.84 10.0 0.684 120.8 6.03 11.0 0.688 107.5 5.30 12.0 0.693 93.7 4.59 13.0 0.710 82.7 3.86 14.0 0.743 68.6 3.19 15.0 0.760 56.5 2.37 16.0 0.805 46 ...

Page 12

... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.5 21.98 0.5 0.949 -31.2 21.47 0.9 0.894 -54.0 20.75 1.0 0.882 -59.4 20.55 1.5 0.814 -84.0 19.37 1.9 0.768 -101.1 18.34 2.0 0.758 -105.1 18.10 2.5 0.718 -123.1 16.86 3.0 0.691 -138.7 15.70 4.0 0.668 -163.5 13.64 5.0 0.667 177.5 11.88 6.0 0.668 164.3 10.49 7.0 0.671 152.2 9.26 8.0 0.673 142.3 8.27 9.0 0.682 131.6 7.37 10.0 0.677 118.5 6.56 11.0 0.684 105.8 5.83 12.0 0.690 91.7 5.12 13.0 0.707 81.2 4.38 14.0 0.744 66 ...

Page 13

... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.8 22.92 0.5 0.943 -33.0 22.35 0.9 0.883 -56.9 21.53 1.0 0.87 -62.4 21.30 1.5 0.798 -87.6 20.00 1.9 0.752 -104.9 18.91 2.0 0.743 -108.8 18.65 2.5 0.704 -126.7 17.35 3.0 0.68 -142.1 16.14 4.0 0.66 -166.3 14.02 5.0 0.662 175.2 12.25 6.0 0.664 162.6 10.84 7.0 0.667 150.9 9.61 8.0 0.67 141.2 8.61 9.0 0.679 130.8 7.71 10.0 0.677 118.1 6.90 11.0 0.683 105.4 6.17 12.0 0.688 91.4 5.46 13.0 0.705 80.9 4.72 14.0 0.741 66.5 4.03 15.0 0.75 55.0 3.19 16.0 0.803 45.1 2.22 17.0 0.823 37.2 1.26 18.0 0.872 31.0 0.27 Typical Noise Parameters ...

Page 14

... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.996 -5.9 20.49 0.5 0.957 -28.4 20.05 0.9 0.909 -49.6 19.48 1.0 0.899 -54.6 19.32 1.5 0.836 -78.1 18.32 1.9 0.792 -94.9 17.41 2.0 0.782 -98.8 17.20 2.5 0.740 -116.8 16.07 3.0 0.709 -132.8 14.99 4.0 0.680 -158.5 13.03 5.0 0.675 -178.4 11.33 6.0 0.675 167.8 9.96 7.0 0.676 155.1 8.75 8.0 0.678 144.9 7.77 9.0 0.686 133.8 6.88 10.0 0.682 120.5 6.09 11.0 0.688 107.5 5.37 12.0 0.694 93.3 4.67 13.0 0.711 82.4 3.92 14.0 0.746 67.5 3.24 15.0 0.753 55.9 2.41 16.0 0.807 45 ...

Page 15

... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.5 22.02 0.5 0.949 -31.2 21.51 0.9 0.894 -54.1 20.79 1.0 0.882 -59.4 20.59 1.5 0.813 -84.0 19.41 1.9 0.768 -101.2 18.38 2.0 0.758 -105.1 18.14 2.5 0.717 -123.1 16.90 3.0 0.690 -138.7 15.74 4.0 0.668 -163.5 13.68 5.0 0.666 177.5 11.93 6.0 0.668 164.4 10.53 7.0 0.670 152.3 9.31 8.0 0.672 142.4 8.32 9.0 0.681 131.7 7.43 10.0 0.678 118.6 6.62 11.0 0.684 105.8 5.89 12.0 0.690 91.8 5.19 13.0 0.707 81.3 4.44 14.0 0.744 66 ...

Page 16

... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.8 22.91 0.5 0.943 -33.0 22.35 0.9 0.883 -56.9 21.53 1.0 0.870 -62.4 21.30 1.5 0.798 -87.6 20.00 1.9 0.752 -104.9 18.91 2.0 0.743 -108.9 18.64 2.5 0.704 -126.7 17.35 3.0 0.679 -142.1 16.14 4.0 0.660 -166.3 14.03 5.0 0.662 175.3 12.25 6.0 0.664 162.6 10.85 7.0 0.667 150.9 9.62 8.0 0.670 141.3 8.63 9.0 0.679 130.9 7.73 10.0 0.677 118.1 6.92 11.0 0.683 105.4 6.19 12.0 0.689 91.4 5.49 13.0 0.705 80.9 4.75 14.0 0.742 66 ...

Page 17

... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.994 -7.4 23.90 0.5 0.936 -35.3 23.25 0.9 0.870 -60.4 22.32 1.0 0.856 -66.1 22.05 1.5 0.781 -92.0 20.61 1.9 0.736 -109.4 19.44 2.0 0.726 -113.3 19.15 2.5 0.690 -131.0 17.79 3.0 0.668 -146.1 16.54 4.0 0.653 -169.6 14.38 5.0 0.656 172.7 12.58 6.0 0.659 160.5 11.17 7.0 0.663 149.0 9.93 8.0 0.666 139.6 8.94 9.0 0.676 129.3 8.03 10.0 0.674 116.6 7.22 11.0 0.680 104.1 6.48 12.0 0.688 90.3 5.77 13.0 0.705 80.1 5.03 14.0 0.743 65 ...

Page 18

S and Noise Parameter Measurements The position of the reference planes used for the mea- surement of both S and Noise Parameter measure- ments is shown in Figure 36. The reference plane can be described as being at the center ...

Page 19

... Passive Biasing Passive biasing of the ATF-551M4 is accomplished by the use of a voltage divider consisting of R1 and R2. The voltage for the divider is derived from the drain voltage which provides a form of voltage feedback through the use help keep drain current constant ...

Page 20

... Figure 2. Typical ATF-551M4 LNA with Active Biasing. The techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor active bias scheme is shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base raised by 0 ...

Page 21

... Q1 typically 0.1 µF. ATF-551M4 Die Model Advanced_Curtice2_Model MESFETM1 NFET=yes PFET=no Vto=0.3 Beta=0.444 Lambda=72e-3 Alpha=13 Tau= Tnom=16.85 Idstc= Ucrit=-0.72 Vgexp=1.91 Gamds=1e-4 Vtotc= Betatce= Rgs=0.5 Ohm ATF-551M4 Minipak Model INSIDE Package VAR Var VAR1 Egn TLINP K=5 TL1 Z2=85 Z=Z2/2 Ohm Z1=30 L=22 mil K=K C A=0.000 C1 F=1 GHz GATE C=0 ...

Page 22

... PCB Layout A suggested PCB pad print for the miniature, Minipak 1412 package used by the ATF-551M4 is shown in Figure 3. 0.4 0.01 0. 0.012 1.1 0.5 0.04 0.020 0. 0.012 0.4 0.01 0.5 0.020 Figure . PCB Pad Print for Minipak 1412. Package (mm [inches ]). Ordering Information Part Number No. of Devices ATF-551M4-TR1 3000 ATF-551M4-TR2 10,000 ...

Page 23

... For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-4217EN ...

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