atf-26884 Avago Technologies, atf-26884 Datasheet

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atf-26884

Manufacturer Part Number
atf-26884
Description
2-16 Ghz General Purpose Gallium Arsenide Fet - Agilent Hewlett-packard
Manufacturer
Avago Technologies
Datasheet
2 – 16 GHz General Purpose
Gallium Arsenide FET
Technical Data
Features
• High Output Power:
• High Gain:
• Low Cost Plastic Package
• Tape-and-Reel Packaging
Description
The ATF-26884 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Electrical Specifications, T
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Symbol
G
NF
G
P
g
I
V
DSS
18.0ּ dBm Typical P
9.0 dB Typical G
Option Available
1 dB
m
P
SS
A
O
Tuned Small Signal Gain: V
Optimum Noise Figure: V
Gain @ NF
Power Output @ 1 dB Gain Compression:
V
Transconductance: V
Saturated Drain Current: V
Pinch-off Voltage: V
DS
= 5 V, I
SS
at 12ּ GHz
[1]
1 dB
O
DS
: V
= 30 mA
at 12ּ GHz
DS
Parameters and Test Conditions
= 3 V, I
DS
DS
= 3 V, I
= 3 V, V
DS
A
DS
DS
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16ּ GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250ּ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
= 25 C
DS
= 10 mA
= 3 V, I
= 3 V, V
= 5 V, I
DS
GS
= 1 mA
= 0 V
DS
DS
GS
= 10 mA
= 30 mA
= 0 V
5-71
f = 12.0 GHz
f = 12.0 GHz
f = 12.0 GHz
f = 12.0 GHz dBm
ATF-26884
84 Plastic Package
mmho
Units
mA
dB
dB
dB
V
Min.
15.0
-3.5
7.0
15
30
Typ. Max.
18.0
-1.5
5965-8703E
9.0
2.2
6.0
35
50
-0.5
90

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atf-26884 Summary of contents

Page 1

... High Gain: 9.0 dB Typical G at 12ּ GHz SS • Low Cost Plastic Package • Tape-and-Reel Packaging [1] Option Available Description The ATF-26884 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor Electrical Specifications Symbol Parameters and Test Conditions G Tuned Small Signal Gain: V ...

Page 2

... ATF-26884 Absolute Maximum Ratings Symbol Parameter V Drain-Source Voltage DS V Gate-Source Voltage GS V Gate-Drain Voltage GD I Drain Current DS [2,3] P Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number Devices Per Reel ...

Page 3

Typical Scattering Parameters, Freq GHz Mag. Ang. 2.0 .96 -36 3.0 .91 -56 4.0 .86 -78 5.0 .79 -97 6.0 .73 -113 7.0 .67 -127 8.0 .62 -144 9.0 .57 -168 10.0 .53 168 11.0 .52 147 12.0 ...

Page 4

Plastic Package Dimensions 0.51 (0.020) 4 SOURCE GATE 1 2 SOURCE 2.15 (0.085) 5° 1.52 ± 0.25 (0.060 ± 0.010) 5.46 ± 0.25 (0.215 ± 0.010) 0.51 (0.020) DIMENSIONS ARE IN MILLIMETERS (INCHES) DRAIN 3 0.20 ± 0.050 (0.008 ...

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