2sc1623a Renesas Electronics Corporation., 2sc1623a Datasheet

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2sc1623a

Manufacturer Part Number
2sc1623a
Description
Npn Silicon Epitaxial Transistor Mini Mold
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC1623A.pdf (5 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
2sc1623a-T1B(L6)
Manufacturer:
ST
0
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2sc1623a-T1B-AT/JM
Manufacturer:
NEC
Quantity:
2 448
Document No. D17841EJ2V0DS00 (2nd edition)
Date Published November 2005 NS CP(K)
Printed in Japan
FEATURES
• High DC Current Gain:
• High Voltage: V
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW ≤ 350
h
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Saturation Voltage
Base to Saturation Voltage
Base to Emitter voltage
Gain Bandwidth Product
Output Capacitance
FE
h
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FE
Marking
CLASSIFICATION
CHARACTERISTIC
h
= 200 TYP. (V
FE
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
90 to 180
CEO
CE
L4
= 50 V
= 6.0 V, I
μ
NPN SILICON EPITAXIAL TRANSISTOR
s, Duty Cycle ≤ 2%
SYMBOL
V
V
C
I
I
h
CE(sat)
BE(sat)
V
C
135 to 270
CBO
EBO
f
FE
= 1.0 mA)
BE
T
ob
V
V
V
I
P
T
T
C
L5
j
stg
CBO
CEO
EBO
T
The mark <R> shows major revised points.
−55 to +150
A
MIN.
0.55
A
= 25°C)
90
DATA SHEET
= 25°C)
100
200
150
5.0
60
50
200 to 400
MINI MOLD
L6
TYP.
0.15
0.86
0.62
200
250
3.0
mW
mA
°C
°C
V
V
V
300 to 600
L7
MAX.
0.65
600
0.1
0.1
0.3
1.0
PACKAGE DRAWING (Unit: mm)
UNIT
MHz
SILICON TRANSISTOR
μ
μ
pF
V
V
V
A
A
2SC1623A
V
V
V
I
I
V
V
V
C
C
CB
EB
CE
CE
CE
CB
= 100 mA, I
= 100 mA, I
= 60 V, I
= 5.0 V, I
= 6.0 V, I
= 6.0 V, I
= 6.0 V, I
= 6.0 V, I
TEST CONDITIONS
c
E
C
C
C
E
E
B
B
= 0 A
= 0 A
= −10 mA
= 0 A, f = 1.0 MHz
= 1.0 mA
= 1.0 mA
= 10 mA
= 10 mA
1: Emitter
2: Base
3: Collector
Note
Note
Note
Note
2005

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2sc1623a Summary of contents

Page 1

... FE 0.15 0.3 0.86 1.0 0.55 0.62 0.65 BE 250 T 3 200 to 400 300 to 600 The mark <R> shows major revised points. SILICON TRANSISTOR 2SC1623A PACKAGE DRAWING (Unit: mm) 1: Emitter 2: Base 3: Collector UNIT TEST CONDITIONS μ μ 5 Note ...

Page 2

... 1.0 V 100 0 100 0.1 0.2 Data Sheet D17841EJ2V0DS 2SC1623A COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector to Emitter Voltage - CURRENT GAIN vs. COLLECTOR CURRENT Pulsed T = 75˚C A 25˚C –25˚C ...

Page 3

... RATIO AND OUTPUT ADMITTANCE vs. SMALL SIGNAL CURRENT GAIN 100 200 1000 h fe Data Sheet D17841EJ2V0DS 2SC1623A Pulsed = 50 • BE(sat • CE(sat 100 - Collector Current - 1.0 MHz 1 2 ...

Page 4

... Collector Current - NORMALIZED h-PARAMETER vs. COLLECTOR TO EMITTER VOLTAGE Data Sheet D17841EJ2V0DS 2SC1623A 1.0 kHz Collector to Emitter Voltage - V ...

Page 5

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SC1623A M8E 02. 11-1 ...

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