1MBI400V-120-50 FUJI [Fuji Electric], 1MBI400V-120-50 Datasheet - Page 3

• Manufacturer Part Number: 1MBI400V-120-50
• Description: IGBT MODULE (V series) 1200V / 400A / 1 in one package
• Manufacturer: FUJI [Fuji Electric]

1MBI400V-120-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
1000
1000
800
600
400
200
800
600
400
200
100
10
0
Gate Capacitance vs. Collector-Emitter Voltage
0
1
0
0
0
Collector-Emitter voltage: V
Collector-Emitter Voltage: V
Collector-Emitter voltage: V
V
1
GE
Tj= 25°C / chip
1
= 0V, ƒ= 1MHz, Tj= 25°C
V
V
GE
GE
10
=20V
= 15V / chip
Coes
2
Cies
2
Tj=25°C
15V
Cres
3
20
12V
CE
125°C
3
CE
CE
4
[V]
[V]
[V]
10V
150°C
8V
5
30
4
3
Collector current vs. Collector-Emitter voltage (typ.)
1000
800
600
400
200
Collector-Emitter voltage vs. Gate-Emitter voltage
10
0
8
6
4
2
0
0
5
0
http://www.fujielectric.com/products/semiconductor/
V
CE
Vcc=600V, Ic=400A, Tj= 25°C
1000
Collector-Emitter voltage: V
Dynamic Gate Charge (typ.)
1
Gate-Emitter Voltage: V
10
Gate charge: Qg [nC]
Tj= 150°C / chip
Tj= 25°C / chip
2000
V
2
GE
= 20V
15
3000
3
V
GE
15V
GE
20
CE
4000
[V]
4
Ic=800A
Ic=400A
Ic=200A
IGBT Modules
[V]
12V
10V
8V
5000
5
25