IRLR014_10 VISHAY [Vishay Siliconix], IRLR014_10 Datasheet

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IRLR014_10

Manufacturer Part Number
IRLR014_10
Description
Power MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91321
S10-1139-Rev. C, 17-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 10 A, dI/dt ≤ 90 A/μs, V
= 25 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 924 μH, R
G
c
D S
DD
b
V
≤ V
GS
e
DS
= 5.0 V
, T
G
J
N-Channel MOSFET
e
≤ 150 °C.
DPAK (TO-252)
SiHLR014-GE3
IRLR014PbF
SiHLR014-E3
IRLR014
SiHLR014
Single
8.4
3.5
6.0
60
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted
Power MOSFET
V
0.20
IRLR014, IRLU014, SiHLR014, SiHLU014
GS
AS
at 5.0 V
= 7.7 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
DPAK (TO-252)
-
IRLR014TRPbF
SiHLR014T-E3
IRLR014TR
SiHLR014T
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Surface Mount (IRLR014, SiHLR014)
• Straight Lead (IRLU014, SiHLU014)
• Available in Tape and Reel
• Logic-Level Gate Drive
• R
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Definition
DS(on)
a
a
a
a
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
I
, T
P
device
DM
I
GS
DS
AS
D
D
stg
DPAK (TO-252)
SiHLR014TRL-GE3
IRLR014TRLPbF
SiHLR014TL-E3
IRLR014TRL
SiHLR014TL
GS
design,
= 4 V and 5 V
- 55 to + 150
a
a
LIMIT
0.020
a
260
± 10
0.20
27.4
a
7.7
4.9
2.5
4.5
60
31
25
low
Vishay Siliconix
d
IPAK (TO-251)
SiHLU014-GE3
IRLU014PbF
SiHLU014-E3
IRLU014
SiHLU014
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
°C
W
V
A
and
1

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IRLR014_10 Summary of contents

Page 1

PRODUCT SUMMARY V ( (Ω 5.0 V DS(on (Max.) (nC (nC (nC) gd Configuration DPAK IPAK (TO-252) (TO-251 ORDERING INFORMATION Package Lead ...

Page 2

IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91321 S10-1139-Rev. C, 17-May-10 IRLR014, IRLU014, SiHLR014, SiHLU014 = 25 °C Fig Typical Transfer Characteristics ...

Page 4

IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area ...

Page 5

Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91321 S10-1139-Rev. C, 17-May-10 IRLR014, IRLU014, SiHLR014, SiHLU014 Pulse width ≤ 1 µs Duty ...

Page 6

IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit ...

Page 7

D.U. Driver gate drive D.U.T. l Reverse recovery current D.U.T. V Re-applied voltage Inductor current Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability ...

Page 8

TO-252AA (HIGH VOLTAGE) D1 DIM. MIN. E 6. 0.89 L4 0.64 D 6.00 H 9.40 b 0.64 b2 0. 2.20 A1 0.00 c 0.45 c2 0.45 D1 5.30 E1 4.40 θ ...

Page 9

TO-251AA (HIGH VOLTAGE Thermal PAD D1 4 (Datum A) View MILLIMETERS DIM. MIN. MAX. A 2.18 2.39 A1 0.89 1.14 b 0.64 0.89 b1 0.65 0.79 b2 0.76 1.14 b3 0.76 1.04 b4 4.95 5.46 ...

Page 10

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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