s-au82al TOSHIBA Semiconductor CORPORATION, s-au82al Datasheet
s-au82al
Manufacturer Part Number
s-au82al
Description
Toshiba Rf Power Amplifier Module
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.S-AU82AL.pdf
(5 pages)
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Part Number:
S-AU82AL
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ST
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1 000
FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL UHF RADIO APPLICATIONS
･Power Gain: 30.7 dB (Min.)
･Total Efficiency: 40% (Min.)
ABSOLUTE MAXIMUM RATINGS
Note 1: The maximum ratings are the limits that must not be exceeded even for an instant, under worst possible
Note 2: The output power rating satisfies the range shown in Figures 1 and 2 according to the operating case
Note 3: The case temperature is monitored using the screw terminal blocks on the input side that are used for the
Note 4: To protect a device from being permanently damaged, the power-on sequence must be as follows (, while the
*When the device is used at Tc =100°C, the output power rating is 60 W as shown in Figure 1. When the power
dissipation at Tc = 100°C exceeds the rating shown in Figure 2, the output derating is required to limit the dissipation
within the specified range.
Maximum Current
Power Supply Voltage
Control Voltage
Instantaneous Output Power
Input Power
Operating Case Temperature
Storage Temperature
70
60
50
40
30
20
10
0
-30 -20 -10
reversed order should be applied when turning off): 1. VDD, 2. Pi, 3. VGG
conditions. Exceeding the ratings may cause device damage, ignition, or deterioration. Therefore, when
designing the circuitry, derating factors should be applied so that the absolute maximum ratings are not
exceeded.
temperature. Ensure that the device should be operated within the specified operating range. The figures below
indicate the output power obtained 2 seconds after Po is generated.
module implementation.
CHARACTERISTICS
Figure 1 Pomax-Tc
0
10
20
Pomax-Tc
30
Tc (℃)
40
TOSHIBA RF POWER AMPLIFIER MODULE
50
60
SYMBOL
Pomax
T
V
V
c (opr)
T
P
I
DD
GG
stg
70
T
S-AU82AL
i
80
(Tc = 25°C, I
V
10.5 ≤ V
V
16.5V, within 2 seconds
10.5 ≤ V
10.5 ≤ V
mW (Note 2)
90
GG
GG
100
= 0 V (GND), RF: none
≤ 5.5 V, Pi = 50 mW, 10.5 ≤ V
DD
DD
DD
1
≤ 16.5 V, Pi = 50 mW
≤ 16.5 V, V
≤ 16.5 V, V
TEST CONDITION
T
180
160
140
120
100
80
60
40
20
< 15 A,
0
-30 -20 -10
Power dissipation (PD)
PD = (VDD × IDD) – Po + Pi
GG
GG
≤ 5.5 V
Z
≤ 5.5 V, Pi = 50
Figure 2 PDmax-Tc
G
0
= Z
10
L
PDmax-Tc
20
= 50Ω
DD
30
Tc(℃)
≤
40
)
50
-30 to 100
-40 to 110
RATING
16.5
100
5.5
15
80
60
70
S-AU82AL
2007-06-21
80
90 100
UNIT
mW
°C
°C
W
A
V
V
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s-au82al Summary of contents
Page 1
... T stg 180 160 140 120 100 80 60 Power dissipation (PD (VDD × IDD) – -30 -20 - 100 1 S-AU82AL 50Ω RATING 15 16.5 5.5 ≤ ≤ 5.5 V 100 ≤ 5 -30 to 100 -40 to 110 PDmax- ...
Page 2
... VSWR load does not deviate much from 50Ω even for a moment, nor deviate even a little from 50Ω continually. The S-AU82AL is not intended for such operations, and proper operation under such conditions is not guaranteed due to the possibilities of heat generation in the module and its applications. ...
Page 3
... Nm. ・Please solder the module leads after the screw is clamped. 3 S-AU82AL 2007-06-21 ...
Page 4
... EQUIVALENT CIRCUIT ① Ω ② TEST FIXTURE S-AU82AL ③ V ⑤GROUND DD （Flange） Po C1: 15000 pF C2: 10 μF L: ϕ0.8-mm enamel wire, 8T, 5ID 2007-06-21 ④ Ω ...
Page 5
... Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. Product Number (without A) This dot indicates that the actual product name is “S-AU82AL.” Alphanumeric characters: Date of manufacture Dot: Indicates that this product is manufactured by “TOSHIBA COMPONENTS.” ...