k7q161882a-fc15 Samsung Semiconductor, Inc., k7q161882a-fc15 Datasheet - Page 13

• Manufacturer Part Number: k7q161882a-fc15
• Description: 512kx36 & 1mx18 Qdr B2 Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7Q161882A
K7Q163682A
D(Data In)
Q(Data Out)
TIMING WAVE FORMS OF READ, WRITE AND NOP
Note: 1. Q1-1 refers to output from address A1+0, Q1-2 refers to output from address A1+1 i.e. the next internal burst address following A1+0.
K
K
SA
W
R
C
C
2. Outputs are disabled(High-Z) one cycle after a NOP.
3. If address A1=A2, data Q1-1=D2-1, data Q1-2=D2-2. Write data is forwarded immediately as read results.
4. BWx are assumed active.
D2-1
A1
READ
D2-2
A2
WRITE
D4-1
A3
READ
D4-2
A4
Q1-1
WRITE
D6-1
A5
READ
Q1-2
- 13 -
512Kx36 & 1Mx18 QDR
D6-2
A6
WRITE
Q3-1
D7-1
Q3-2
NOP
D7-2
A7
Q5-1
WRITE
Q5-2
Don t Care
TM
b2 SRAM
July 2002
Undefined
Rev 1.0