ina-02100 ETC-unknow, ina-02100 Datasheet - Page 2

• Manufacturer Part Number: ina-02100
• Description: Noise, Cascadable Silicon Bipolar Mmic Amplifier
• Manufacturer: ETC-unknow

INA-02100 Absolute Maximum Ratings
INA-02100 Electrical Specifications
INA-02100 Typical Scattering Parameters
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-02100 mounted in a 70 mil stripline package.
Parameter
Device Current
Power Dissipation
RF Input Power
Junction Temperature
Storage Temperature
Symbol
VSWR
G
f
ISO
NF
P
IP
t
V
dV/dT
3 dB
D
G
1 dB
d
MODELS section of the Communications Components Designer’s Catalog.
is on the following page.
P
3
Freq.
GHz
P
0.01
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
Power Gain (|S
Gain Flatness
3 dB Bandwidth
Reverse Isolation (|S
Input VSWR
Output VSWR
50
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
0.06
0.05
0.03
0.02
0.01
0.02
0.03
0.06
0.10
0.17
0.24
0.30
0.37
0.42
0.46
0.50
0.51
Parameters and Test Conditions
Mag
Noise Figure
[2,3]
S
11
21
–103
–116
–128
–146
–162
Ang
–46
–52
–46
–44
–35
–29
–41
–60
–73
–89
|
–4
–8
2
)
12
|
2
)
21.5
18.3
14.6
32.5
32.5
32.3
31.8
31.1
30.4
29.7
29.0
27.9
26.9
26.0
25.1
24.1
22.9
dB
42.1
42.0
41.3
39.0
36.2
33.3
30.7
28.4
24.8
22.0
19.9
18.0
16.0
14.0
12.0
S
Mag
8.2
5.4
Absolute Maximum
21
[1,3]
–65 to 200 C
[2]
–108
–124
–141
–157
–174
Ang
142
116
+13 dBm
–16
–30
–43
–55
–65
–74
–92
171
: I
, T
400 mW
–2
–8
50 mA
200 C
6-91
d
A
= 35 mA, Z
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
[1]
f = 0.5 GHz
f = 0.1 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.5 GHz
= 25 C
(Z
–39.3
–39.4
–37.9
–39.2
–38.8
–40.4
–39.3
–39.5
–38.1
–36.4
–35.5
–34.1
–32.6
–33.1
–31.4
–29.3
–28.5
dB
O
= 50 , T
[1]
O
S
= 50
Mag
.011
.011
.013
.011
.011
.010
.011
.011
.012
.015
.017
.020
.023
.022
.027
.034
.038
12
Ang
–12
–17
–19
–16
–16
–30
–28
–31
–44
–47
A
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 16.7 mW/ C for T
14
12
–4
–2
–5
–9
= 25 C, I
6
any of these limits are exceeded.
176 C.
Mounting Surface
Units
mV/ C
Thermal Resistance
dBm
dBm
GHz
psec
dB
dB
dB
dB
V
Mag
.20
.20
.20
.21
.22
.24
.26
.28
.32
.34
.36
.38
.32
.26
.22
.19
.15
d
jc
Min.
S
= 5 mA)
= 60 C/W
4.0
22
(T
–111
–122
–148
MS
Ang
–14
–26
–40
–60
–91
178
–1
–1
–1
–4
) = 25 C
1
3
4
2
Typ. Max.
1.4:1
1.5:1
31.5
+10
350
1.0
2.0
5.5
23
39
11
1.5
MS
[2]
1.29
1.25
1.34
1.27
1.28
1.17
1.33
1.36
1.63
1.56
1.67
1.58
1.41
1.32
1.17
1.19
1.83
>
:
7.0
k