MADL-000062-105600 MA-COM [M/A-COM Technology Solutions, Inc.], MADL-000062-105600 Datasheet - Page 5

• Manufacturer Part Number: MADL-000062-105600
• Description: Silicon PIN Limiter Diodes
• Manufacturer: MA-COM [M/A-COM Technology Solutions, Inc.]

5
Silicon PIN Limiter Diodes
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA4L
1) Maximum Series Resistance: R
2) Nominal C.W. Thermal Resistance: Ө
3) Maximum High Signal Performance: Measured using a single shunt diode (die) attached directly to the gold
Handling:
from perspiration, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick up
tools is strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are minimized.
Die Attach:
mounted with a gold-tin, eutectic solder perform or conductive silver epoxy. The metal RF and D.C. ground plane
mounting surface must be free of contamination and should have a surface flatness or < ± 0.002”.
Wire Bonding:
1.0µM. Thermo-compression wedge bonding using a .7 to 1 mil diameter gold wire is recommended, depending
on the contact diameter. The heat stage temperature should be set to approximately 200°C with a bonding tip
temperature of 125˚C and a force of 18 to 40 grams. Use of ultrasonic energy is not advised but if necessary it
should be adjusted to the minimum required to achieve a good bond. Excessive energy or force applied to the top
contact will cause the metallization to dislodge and lift off. Automatic ball bonding may also be used.
S
assembly information.
4) Maximum C.W. Incident Power: Measured in a 50Ω, SMA, connectorized housing @ 4GHz utilizing a TWT
ee
• Eutectic Die Attachment Using Hot Gas Die Bonder: An 80/20, gold / tin eutectic solder perform is
• Eutectic Die Attachment Using Reflow Oven: Refer to
• Epoxy Die Attachment: A thin, controlled amount of electrically conductive silver epoxy should be applied,
amplifier and the same single diode assembly configuration as stated in Note 3 above.
total diode resistance: R
metal (infinite) heatsink. Chip only thermal resistance values are approximately 2°C/W lower than the
ODS-30 listed package values in the specifications table.
plated RF housing ground with 2 mil thick conductive silver epoxy in a 50Ω, SMA, connectorized test fixture.
Chip anode contact is thermo-compression wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick
Rogers 5880 Duroid microstrip trace. A shunt coil provides the D.C. return. Test frequency = 9.4 GHz,
RF pulse width = 1.0 µS, Duty Cycle = 0.001%.
recommended with a work surface temperature of 255°C and a tool tip temperature of 220°C. When the hot
gas is applied, the temperature at the tool tip should be approximately 290°C. The chip should not be
exposed to a temperatures in excess of 320°C for more than 10 seconds.
Instructions”.
approximately 1-2 mils thick to minimize ohmic and thermal resistances. A small epoxy fillet should be visible
around the outer perimeter of the chip after placement to ensure full area coverage. Cure the conductive
silver epoxy per the manufacturer’s schedule, typically 150˚C for 1 hour.
Application Note
Notes for Specification and Nominal High Signal Performance Tables:
Series
All semiconductor chips should be handled with care in order to avoid damage or contamination
The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1.0µM. Die can be
M541, “Bonding and Handling Procedures for Chip Diode Devices” for more detailed handling and
The chip’s anode metallization stack is comprised of Ti/Pt/Au with a final gold thickness of
S
= Rj (Junction Resistance) + R
Die Handling and Mounting Information
S
, is measured at 500 MHz in the ODS-30 package and is equivalent to the
TH
is measured in a ceramic pill package, ODS-30, mounted to a
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
O
• North America Tel: [phone] • Europe Tel: [phone]
• India Tel: [phone]
(Ohmic Resistance)
Visit www.macomtech.com for additional data sheets and product information.
Application Note
M538, “Surface Mounting
• China Tel: [phone]
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