MA4AGSW1_V5 MA-COM [M/A-COM Technology Solutions, Inc.], MA4AGSW1_V5 Datasheet

MA4AGSW1_V5

Manufacturer Part Number

MA4AGSW1_V5

Description

SPST Reflective AlGaAs PIN Diode Switch

Manufacturer

MA-COM [M/A-COM Technology Solutions, Inc.]

Datasheet

1.MA4AGSW1_V5.pdf (7 pages)

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FEATURES



The MA4AGSW1 is an Aluminum-Gallium-Arsenide,

single pole, single throw (SPST), PIN diode switch.

The switch features enhanced AlGaAs anodes which

are formed using M/A-COM Tech’s patented hetero-

junction technology. This technology produces a

switch with less loss than conventional GaAs proc-

esses. As much as a 0.3 dB reduction in insertion

loss can be realized at 50GHz. These devices are

fabricated on an OMCVD epitaxial wafer using a

process designed for high device uniformity and

extremely low parasitics. The diodes themselves

exhibit low series resistance, low capacitance, and

fast switching speed. They are fully passivated with

silicon nitride and have an additional polymer layer

for scratch protection. The protective coating

prevents damage to the diode junction and anode

air-bridges during handling and assembly. Off chip

bias circuitry is required.

The high electron mobility of AlGaAs and the low

capacitance of the PIN diodes makes this switch

ideal for fast switching, high frequency, multi-throw

switch designs. These AlGaAs PIN switches are use

in switching arrays for radar systems, radiometers,

test equipment and other multi-assembly compo-

nents.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

SPST Reflective AlGaAs PIN Diode Switch

MA4AGSW1

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

Ultra Broad Bandwidth : 50 MHz to 50 GHz

Functional Bandwidth : 50 MHz to 70 GHz

0.3 dB Insertion Loss

46 dB Isolation at 50 GHz

Low Current consumption

M/A-COM Tech’s unique AlGaAs

hetero-junction anode technology

Silicon Nitride Passivation

Polymer Scratch protection

RoHS Compliant* and 260°C Reflow Compatible

 -5V for low loss state

+10mA for Isolation state

APPLICATIONS

DESCRIPTION

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

Maximum combined operating conditions for RF Power, D.C.

bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @

+85°C.

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

Absolute Maximum Ratings @ T

Incident C.W. RF Power

Operating Temperature

Visit www.macomtech.com for additional data sheets and product information.

Junction Temperature

Storage Temperature

Breakdown Voltage

Bias Current

Yellow areas indicate bond pads

Parameter

• China Tel: +86.21.2407.1588

Maximum Rating

-55°C to +125°C

-55°C to +150°C

+23dBm C.W.

± 25mA

+150°C

AMB

25V

= +25°C

Rev. V5

Related parts for MA4AGSW1_V5

MA4AGSW1_V5 Summary of contents

Page 1

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch FEATURES  Ultra Broad Bandwidth : 50 MHz to 50 GHz  Functional Bandwidth : 50 MHz to 70 GHz  0.3 dB Insertion Loss  Isolation at 50 GHz  ...

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch PARAMETER INSERTION LOSS @ -5V ISOLATION @ +10mA INPUT RETURN LOSS @ -5V OUTPUT RETURN LOSS @ -5V SWITCHING SPEED ( VOLTAGE ) *Note: Typical switching speed ...

Page 3

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Typical RF Performance (Probed on 0 -0.1 -0.2 -0.3 -0.4 -0.5 0.00 0 -10 -20 -30 -40 -50 -60 0.00 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is ...

Page 4

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Typical RF Performance (Probed on wafer) 0 -10 -20 -30 -40 -50 0.00 0 -10 -20 -30 -40 -50 0.00 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is ...

Page 5

... Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad- band, monolithic, bias networks which may be used as an alternative to the suggested individual component bias network shown below. Refer to datasheets for the The lowest insertion loss, P1dB, IP D.C. Bias node, which is achievable with a standard, ± ...

Page 6

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Chip Dimensions and Bonding Pad Locations (In Yellow) DIM Pads X-Y 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, ...

Page 7

MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch CLEANLINESS These chips should be handled in a clean environment. STATIC SENSITIVITY These Devices are considered ESD Class 0 HBM. Proper ESD techniques should be used when handling these devices. GENERAL HANDLING The ...

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MA4AGSW1_V5 MA-COM [M/A-COM Technology Solutions, Inc.], MA4AGSW1_V5 Datasheet

MA4AGSW1_V5

Related parts for MA4AGSW1_V5

MA4AGSW1_V5 Summary of contents

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