MM5450_06 MICREL [Micrel Semiconductor], MM5450_06 Datasheet

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MM5450_06

Manufacturer Part Number
MM5450_06
Description
LED Display Driver
Manufacturer
MICREL [Micrel Semiconductor]
Datasheet
Absolute Maximum Ratings
Features
Thermal Characteristics
General Description
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
January, 2003. Rev. 0.
R
Gate Charge (Typical 0.5nC)
Maximum Junction Temperature Range (150°C)
R
Symbol
DS(on)
Symbol
DS(on)
T
V
STG,
V
R
I
P
T
DSS
I
DM
SemiWell
GS
θJA
D
D
L
T
(Max 5 Ω )@V
(Max 5.3Ω )@V
J
Drain to Source Voltage
Continuous Drain Current(@T
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (T
Total Power Dissipation Single Operation (T
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
Thermal Resistance, Junction-to-Ambient
GS
Semiconductor
GS
=10V
=4.5V
Parameter
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Parameter
A
= 25
°C)
A
A
=25
=70
Logic N-Channel MOSFET
°C
°C
)
Min.
)
-
(Note 1)
Typ.
Value
Symbol
-
TO-92
PRELIMINARY
2. Gate
- 55 ~ 150
Value
±
200
500
300
0.4
3.2
60
20
1
Max.
312.5
2
3
2N7000
Units
3. Drain
1. Source
mW
Units
mA
mA
°C
°C
°C/W
W
V
V
1/6

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MM5450_06 Summary of contents

Page 1

SemiWell Semiconductor Features R (Max 5 Ω )@V =10V ■ DS(on (Max 5.3Ω )@V =4.5V DS(on) GS Gate Charge (Typical 0.5nC) ■ Maximum Junction Temperature Range (150°C) ■ General Description This Power MOSFET is produced using planar DMOS ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS Δ Breakdown Voltage Temperature DSS coefficient Δ Drain-Source Leakage Current DSS Gate-Source Leakage, Forward I GSS Gate-Source Leakage, Reverse On Characteristics V Gate ...

Page 3

Fig 1. On-State Characteristics V GS Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4 Bottom : 3 Drain-Source Voltage [V] DS Fig 3. On Resistance ...

Page 4

Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J 4/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Fig 8. On-Resistance Variation 2.5 2.0 1.5 1.0 ...

Page 5

Fig. 9. Gate Charge Test Circuit & Waveforms 50K Ω 50K Ω 50K Ω 50K Ω 200nF 200nF 200nF 200nF 12V 12V 12V 12V 300nF 300nF 300nF 300nF 1mA 1mA 1mA 1mA ...

Page 6

TO-92 Package Dimension Dim. Min 4.43 D 14 6/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. mm Typ. Max. Min. 4.2 3.7 4.83 0.174 14.87 ...

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