RF5111PCBA-41X RFMD [RF Micro Devices], RF5111PCBA-41X Datasheet

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RF5111PCBA-41X

Manufacturer Part Number
RF5111PCBA-41X
Description
3V DCS POWER AMPLIFIER
Manufacturer
RFMD [RF Micro Devices]
Datasheet
Product Description
The RF5111 is a high-power, high-efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in DCS1800/1900 handheld digital
cellular equipment and other applications in the
1700MHz to 2000MHz band. On-board power control
provides over 65dB of control range with an analog volt-
age input, and provides power down with a logic “low” for
standby operation. The device is self-contained with 50Ω
input and the output can be easily matched to obtain opti-
mum power and efficiency characteristics. The RF5111
can be used together with the RF5110 for dual-band
operation. The device is packaged in an ultra-small plas-
tic package, minimizing the required board space.
Optimum Technology Matching® Applied
Rev A1 060921
Typical Applications
• 3V DCS1800 (PCN) Cellular Handsets
• 3V DCS1900 (PCS) Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
Si BJT
Si Bi-CMOS
InGaP/HBT
VAT EN
GND1
VCC1
RF IN
Functional Block Diagram
1
2
3
4
RoHS Compliant & Pb-Free Product
16
5
GaAs HBT
SiGe HBT
GaN HEMT
15
6
14
7
0
13
8
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
12
11
10
9
RF OUT
RF OUT
RF OUT
NC
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• GPRS Compatible
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 2.7V to 4.8V Supply Voltage
• +33dBm Output Power at 3.5V
• 27dB Gain with Analog Gain Control
• 50% Efficiency
• 1700MHz to 1950MHz Operation
• Supports DCS1800 and PCS1900
RF5111
RF5111PCBA-41X Fully Assembled Evaluation Board
Package Style: QFN, 16-Pin, 3x3
Shaded lead is pin 1.
0.15 C B
2 PLCS
0.15 C A
-A-
2 PLCS
3V DCS Power Amplifier
3.00 SQ.
2.75 SQ.
4 PLCS
3V DCS POWER AMPLIFIER
0.45
0.00
4 PLCS
0.23
0.13
0.60
0.24
TYP
-B-
1.37 TYP
2 PLCS
1.50 TYP
2 PLCS
0.15 C A
0.15 C B
0.50
Dimensions in mm.
0.10 M
RF5111
0.30
0.18
MAX
12°
C A B
1.00
0.85
0.80
0.65
0.55
0.30
1.65
1.35
http://www.rfmd.com
-C-
SQ.
Fax (336) 664 0454
Tel (336) 664 1233
0.05
0.01
SEATING
PLANE
0.05 C
2-1

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RF5111PCBA-41X Summary of contents

Page 1

... Operation 12 RF OUT • Supports DCS1800 and PCS1900 11 RF OUT 10 RF OUT Ordering Information RF5111 RF5111PCBA-41X Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA RF5111 3V DCS POWER AMPLIFIER 0. -A- 1.00 2 PLCS 3.00 SQ. 0.85 1.50 TYP ...

Page 2

RF5111 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (V ) APC Enable Voltage (V ) AT_EN DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Parameter Min. Overall ...

Page 3

Parameter Min. Power Control Power Control “ON” Power Control “OFF” Power Control Range Gain Control Slope APC Input Capacitance APC Input Current Turn On/Off Time Power Supply Power Supply Voltage Power Supply Current Rev A1 060921 Specification Typ. Max. 3.0 ...

Page 4

RF5111 Pin Function Description 1 VAT EN Control pin for the pin diode. The purpose of the pin diode is to attenu- ate RF drive level when V through the device caused by self-biasing under high RF drive levels. A ...

Page 5

Pin Function Description 14 VCC2 Power supply for the driver stage. This pin forms the shunt inductance needed for proper tuning of the second interstage match. 15 VCC2 Same as pin 14. 16 VCC2 Same as pin 14. Pkg GND ...

Page 6

RF5111 Theory of Operation and Application Information The RF5111 is a three-stage device with 28 dB gain at full power. Therefore, the drive required to fully saturate the out- put is +5dBm. Based upon HBT (Heterojunction Bipolar Transistor) technology, the ...

Page 7

Because of the inverting stage at the APC input, the current through the PIN diode is inverted from the APC voltage. Thus, when V is high for maximum output power, the attenuator is turned off to obtain maximum drive level ...

Page 8

RF5111 Distance between edge of device and capacitor is 0.240" to improve the "off" isolation 2-8 Application Schematic Instead of a stripline, an inductor can be used V ...

Page 9

RF IN 750 Ω 500 Ω VCC 5k Ω 3k Ω APC1 AT_EN 1.5k Ω Rev A1 060921 Internal Schematic VCC1 APC1 500 Ω 320 Ω 2.5k Ω 2.5k Ω GND1 RF5111 VCC2 VCC APC2 VCC 200 Ω 1.5k Ω ...

Page 10

RF5111 Evaluation Board Schematic Dual-Band DCS/PCS Lumped Element VAT EN C25 C24 Ω μstrip VCC 100 mils C3 C3A ...

Page 11

Board Thickness 0.032”, Board Material FR-4, Multi-Layer Rev A1 060921 Evaluation Board Layout Board Size 2.0” x 2.0” RF5111 2-11 ...

Page 12

RF5111 RF Generator 3dB Pulse Generator Notes about testing the RF5111 The test setup shown above includes two attenuators. The 3dB pad at the input is to minimize the effects that the switch- ing of the input impedance of the ...

Page 13

PCB Surface Finish The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3μinch to 8μinch gold over 180μinch nickel. PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standards when ...

Page 14

RF5111 PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around ...

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