SGM2016AP SONY [Sony Corporation], SGM2016AP Datasheet

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SGM2016AP

Manufacturer Part Number
SGM2016AP
Description
GaAs N-channel Dual-Gate MES FET
Manufacturer
SONY [Sony Corporation]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGM2016AP
Manufacturer:
SONY/索尼
Quantity:
20 000
For the availability of this product, please contact the sales office.
Description
GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications
including UHF TV tuners, cellular/cordless phone,
and DBS IF amplifiers.
Features
• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode
Application
Structure
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
• Gate 1 to source voltage
• Gate 2 to source voltage
• Drain current
• Allowable power dissipation P
• Channel temperature
• Storage temperature
The SGM2016AM/AP is an N-channel dual-gate
UHF-band high-frequency amplifier, mixer, and oscillator
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
GaAs N-channel Dual-Gate MES FET
V
V
V
I
Tch
Tstg
D
DSX
G1S
G2S
D
–55 to +150
150
150
12
–5
–5
55
SGM2016AM/AP
– 1 –
mW
mA
°C
°C
V
V
V
SGM2016AM
SGM2016AP
E96Y10-PS

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SGM2016AP Summary of contents

Page 1

... Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. SGM2016AM/ DSX V –5 V G1S V –5 V G2S 150 mW D Tch 150 °C Tstg –55 to +150 °C – 1 – SGM2016AM SGM2016AP E96Y10-PS ...

Page 2

Electrical Characteristics Item Drain cut-off current Gate 1 to source current Gate 2 to source current Drain saturation current Gate 1 to source cut-off voltage Gate 2 to source cut-off voltage Forward transfer admittance Input capacitance Feedback capacitance Noise figure ...

Page 3

I vs G2S 5V –2.0 –1.5 –1.0 –0.5 V – Gate 2 to source voltage [V] G2S NF vs. V G1S 5V 900MHz) DS ...

Page 4

S-parameter vs. Frequency Characteristics (V S11 f (MHz) MAG ANG 100 0.999 –3.8 200 0.994 –7.9 300 0.981 –11.8 400 0.969 –16.0 500 0.952 –20.0 600 0.935 –24.1 700 0.917 –27.8 800 0.896 –31.3 900 0.877 –34.7 1000 0.850 –38.0 ...

Page 5

... Package Outline Unit: mm SGM2016AM SONY CODE JEDEC CODE SGM2016AP M-254 2.9 ± 0.2 1 0.1 + 0.1 0.4 – 0.05 0.6 – 0. 0.85 ) 1.8 M-254 PACKAGE MASS EIAJ CODE M-255 2.9 ± 0.2 1 0.1 + 0.1 0.4 – 0.05 0.6 – 0. 0.85 ) 1.8 SONY CODE M-255 PACKAGE MASS EIAJ CODE JEDEC CODE – 5 – SGM2016AM/AP + 0.2 1.1 – 0 0.1 + 0.1 0.10 – 0.01 1 ...

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