RJK60S5DPE RENESAS [Renesas Technology Corp], RJK60S5DPE Datasheet - Page 5

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RJK60S5DPE

Manufacturer Part Number
RJK60S5DPE
Description
600V - 20A - SJ MOS FET High Speed Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
RJK60S5DPE
R07DS0639EJ0100 Rev.1.00
Apr 23, 2012
Vin
800
700
600
500
400
−25
Drain to Source Breakdown Voltage
Vin
10 V
vs. Case Temperature (Typical)
Vin Monitor
10 Ω
Switching Time Test Circuit
Case Temperature
0
Avalanche Test Circuit
100 Ω
V
Monitor
25
Rg
DS
50
D.U.T.
75
100 125 150
I
V
D. U. T
D
Tc (°C)
GS
= 10 mA
I
Monitor
AP
R
= 0
L
V
= 300 V
L
DD
Vout
Monitor
V
DD
0
t d(on)
V
1.6
1.2
0.8
0.4
DD
Vout
Vin
0
25
Channel Temperature
Maximum Avalanche Energy vs.
Channel Temperature Derating
E
AR
10%
I
AP
=
50
10%
Avalanche Waveform
1
2
90%
I
D
t r
L • I
Waveform
75
AP
2
100
t d(off)
V
V
Rg ≥ 100 Ω
DSS
90%
DD
V
Tch (°C)
DSS
125
– V
= 50 V
DD
V
90%
Preliminary
DS
Page 5 of 6
150
10%
V
(BR)DSS
t f

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