AO3419L ETC [List of Unclassifed Manufacturers], AO3419L Datasheet

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AO3419L

Manufacturer Part Number
AO3419L
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
ETC [List of Unclassifed Manufacturers]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO3419L
Manufacturer:
Alpha
Quantity:
13 500
Part Number:
AO3419L
Manufacturer:
AOS/万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO3419 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AO3419L
( Green Product ) is offered in a lead-free package.
AO3419, AO3419L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
G
S
B
T
T
T
T
A
A
A
A
(SOT-23)
Top View
=25°C
=70°C
=25°C
=70°C
TO-236
, low gate charge and
C
A
A
A
=25°C unless otherwise noted
D
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
R
ESD Rating: 2000V HBM
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= -3.5 A
(V) = -20V
G
< 75mΩ (V
< 95mΩ (V
< 145mΩ (V
Maximum
-55 to 150
±12
-3.5
-2.8
Typ
-20
-15
1.4
0.9
65
85
43
D
S
GS
GS
GS
= -10V)
= -4.5V)
= -2.5V)
Max
125
90
60
Rev 1:Nov 2004
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO3419L Summary of contents

Page 1

... The AO3419 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications ESD protected. AO3419L ( Green Product ) is offered in a lead-free package. TO-236 (SOT-23) Top View G ...

Page 2

... AO3419, AO3419L Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO3419, AO3419L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -9.0V -10.0V -8.0V 20 -7.0V -6. (Volts) DS Fig 1: On-Region Characteristics 160 140 V =-2.5V GS 120 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 140 120 100 80 25°C ...

Page 4

... AO3419, AO3419L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 I =-3. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θ ...

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