BUZ382 SIEMENS [Siemens Semiconductor Group], BUZ382 Datasheet
BUZ382
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BUZ382 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET V Type DS BUZ 382 400 V Maximum Ratings Parameter Drain source voltage Drain-gate voltage Continuous drain current °C C ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 130 W 110 P tot 100 Safe operating area ...
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Typ. output characteristics parameter µ 125W tot ...
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Drain-source on-resistance (on) j parameter 1.2 1 (on) 0.9 0.8 0.7 0.6 98% 0.5 typ 0.4 0.3 0.2 0.1 0.0 -60 -20 ...
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Drain-source breakdown voltage (BR)DSS j 480 V 460 V (BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 - Semiconductor Group Typ. gate charge Gate ...
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Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 BUZ 382 07/96 ...