ct60am-18c Renesas Electronics Corporation., ct60am-18c Datasheet

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ct60am-18c

Manufacturer Part Number
ct60am-18c
Description
Insulated Gate Bipolar Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CT60AM-18C
Manufacturer:
MIT
Quantity:
2 000
Part Number:
CT60AM-18C
Quantity:
2 000
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulse)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
CT60AM-18C
Insulated Gate Bipolar Transistor
Features
Appearance Figure
Applications
Voltage-resonance type home appliances (Microwave ovens, IH cooking devices, IH rice-cookers)
Maximum Ratings
Rev.1.00, Aug.20.2004, page 1 of 5
V
I
Integrated fast-recovery diode
For voltage-resonance
C
CES
: 60 A
: 900 V
Parameter
TO-3PL
Symbol
1
V
V
V
Tstg
2
I
P
GEM
Tj
CES
GES
I
CM
I
C
E
C
3
4
– 40 to +150
– 40 to +150
Ratings
1
900
120
200
60
40
20
30
2, 4
3
Unit
W
V
V
V
A
A
A
C
C
1 : Gate
2 : Collector
3 : Emitter
4 : Collector
V
V
V
Tc = 25 C
GE
CE
CE
= 0 V
= 0 V
= 0 V
REJ03G0287-0100
Conditions
Aug.20.2004
(Tc = 25°C)
Rev.1.00

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ct60am-18c Summary of contents

Page 1

... CT60AM-18C Insulated Gate Bipolar Transistor Features V : 900 V CES Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL Applications Voltage-resonance type home appliances (Microwave ovens, IH cooking devices, IH rice-cookers) Maximum Ratings Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulse) ...

Page 2

... CT60AM-18C Electrical Characteristics Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Tail loss Tail current Emitter-collector voltage ...

Page 3

... CT60AM-18C Performance Curves Collector Current vs. Collector-Emitter Voltage (Typical) 200 P = 200W C 160 15V 120 20V Collector-Emitter Voltage V Collector Current vs. Gate-Emitter Voltage (Typical) 200 160 120 Gate-Emitter Voltage V Switching Characteristics (Typical ...

Page 4

... CT60AM-18C Gate-Emitter Voltage vs. Gate Charge Characteristic (Typical 60A 25° 160 240 Gate Charge Qg (nC) Gate-Emitter Threshold Voltage vs. Junction Temperature (Typical) 7.0 6.0 5.0 4.0 3.0 2.0 – Junction Temperature Tj (°C) IGBT Transient Thermal Impedance Characteristics –3 –2 – ...

Page 5

... Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page Lead Material 9.8 Cu alloy 5 2 0.6 3 Quantity Standard order code 25 Type name 25 Type name – Lead forming code Dimension in Millimeters Symbol Min Typ Max Standard order code example CT60AM-18C CT60AM-18C-AD ...

Page 6

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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