TC74LVX04FN(ELF,M) Toshiba, TC74LVX04FN(ELF,M) Datasheet

IC INVERTER HEX 14-SOL

TC74LVX04FN(ELF,M)

Manufacturer Part Number
TC74LVX04FN(ELF,M)
Description
IC INVERTER HEX 14-SOL
Manufacturer
Toshiba
Series
74LVXr
Datasheet

Specifications of TC74LVX04FN(ELF,M)

Logic Type
Inverter
Number Of Inputs
1
Number Of Circuits
6
Current - Output High, Low
4mA, 4mA
Voltage - Supply
2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TC74LVX04FN(ELP)
TC74LVX04FN(ELP,M)
TC74LVX04FNELFM
TC74LVX04FNELP
TC74LVX04FNELPM
TC74LVX04FNELPM
Hex Inverter
fabricated with silicon gate CMOS technology. Designed for use
in 3-V systems, it achieves high-speed operation while
maintaining the CMOS low power dissipation.
systems.
output, which provide high noise immunity and stable output.
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5V to 3V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
Features
The TC74LVX04F/FN/FT is a high-speed CMOS hex inverter
This device is suitable for low-voltage and battery operated
The internal circuit is composed of 3 stages including buffer
An input protection circuit ensures that 0 to 5.5V can be
High-speed: t
Low power dissipation: I
Input voltage level: V
Power-down protection provided on all inputs
Balanced propagation delays: t
Low noise: V
Pin and function compatible with 74HC04
TC74LVX04F,TC74LVX04FN,TC74LVX04FT
OLP
pd
= 4.1 ns (typ.) (V
= 0.5 V (max)
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
V
IL
IH
= 0.8 V (max) (V
CC
= 2.0 V (min) (V
= 2 μA (max) (Ta = 25°C)
pLH
CC
∼ − t
= 3.3 V)
pHL
CC
CC
= 3 V)
= 3 V)
1
Note: xxxFN (JEDEC SOP) is not available in
Weight
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
TC74LVX04F
TC74LVX04FN
TC74LVX04FT
Japan.
TC74LVX04F/FN/FT
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
2007-10-17

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TC74LVX04FN(ELF,M) Summary of contents

Page 1

... TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX04F,TC74LVX04FN,TC74LVX04FT Hex Inverter The TC74LVX04F/FN/ high-speed CMOS hex inverter fabricated with silicon gate CMOS technology. Designed for use in 3-V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation. This device is suitable for low-voltage and battery operated systems ...

Page 2

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 3

Electrical Characteristics DC Characteristics Characteristics Symbol H-level V Input voltage L-level V H-level V Output voltage L-level V Input leakage current I Quiescent supply current Characteristics (input: t Characteristics Symbol t pLH Propagation delay time t pHL ...

Page 4

Noise Characteristics (Ta = 25°C, input: t Characteristics Quiet output maximum dynamic V OL Quiet output minimum dynamic V OL Minimum high level dynamic input voltage V IH Maximum low level dynamic input voltage V IL Input Equivalent Circuit INPUT ...

Page 5

Package Dimensions Weight: 0.18 g (typ.) TC74LVX04F/FN/FT 5 2007-10-17 ...

Page 6

Package Dimensions (Note) Note: This package is not available in Japan. Weight: 0.12 g (typ.) TC74LVX04F/FN/FT 6 2007-10-17 ...

Page 7

Package Dimensions Weight: 0.06 g (typ.) TC74LVX04F/FN/FT 7 2007-10-17 ...

Page 8

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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