TC74HC00AFN(ELF,M) Toshiba, TC74HC00AFN(ELF,M) Datasheet

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TC74HC00AFN(ELF,M)

Manufacturer Part Number
TC74HC00AFN(ELF,M)
Description
IC GATE NAND QUAD 2INP 14-SOL
Manufacturer
Toshiba
Series
74HCr
Datasheet

Specifications of TC74HC00AFN(ELF,M)

Logic Type
NAND Gate
Number Of Inputs
2
Number Of Circuits
4
Current - Output High, Low
4mA, 4mA
Voltage - Supply
2 V ~ 6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TC74HC00AFNFTR
Quad 2-Input NAND Gate
GATE fabricated with silicon gate C
LSTTL while maintaining the CMOS low power dissipation.
output, which provide high noise immunity and stable output.
discharge or transient excess voltage.
Features
Pin Assignment
IEC Logic Symbol
The TC74HC00A is a high speed CMOS 2-INPUT NAND
It achieves the high speed operation similar to equivalent
The internal circuit is composed of 3 stages including buffer
All inputs are equipped with protection circuits against static
High speed: t
Low power dissipation: I
High noise immunity: V
Output drive capability: 10 LSTTL loads
Symmetrical output impedance: |I
Balanced propagation delays: t
Wide operating voltage range: V
Pin and function compatible with 74LS00
TC74HC00AP,TC74HC00AF,TC74HC00AFN
pd
= 6 ns (typ.) at V
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
NIH
CC
= 1 μA (max) at Ta = 25°C
= V
pLH
NIL
CC
2
CC
MOS technology.
OH
∼ − t
(opr) = 2 to 6 V
= 5 V
= 28% V
| = I
pHL
OL
CC
= 4 mA (min)
(min)
1
Note: xxxFN (JEDEC SOP) is not available in
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
TC74HC00AP
TC74HC00AF
TC74HC00AFN
Japan.
TC74HC00AP/AF/AFN
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
2007-10-01

Related parts for TC74HC00AFN(ELF,M)

TC74HC00AFN(ELF,M) Summary of contents

Page 1

... TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC00AP,TC74HC00AF,TC74HC00AFN Quad 2-Input NAND Gate The TC74HC00A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. ...

Page 2

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range − ...

Page 3

Electrical Characteristics DC Characteristics Characteristics Symbol High-level input V IH voltage Low-level input V IL voltage High-level output V OH voltage Low-level output V OL voltage Input leakage I IN current Quiescent supply I CC current AC Characteristics = 15 ...

Page 4

AC Characteristics = 50 pF, input Characteristics Symbol t TLH Output transition time t THL t pLH Propagation delay time t pHL Input capacitance Power dissipation capacitance (Note) Note defined as ...

Page 5

Package Dimensions Weight: 0.96 g (typ.) TC74HC00AP/AF/AFN 5 2007-10-01 ...

Page 6

Package Dimensions Weight: 0.18 g (typ.) TC74HC00AP/AF/AFN 6 2007-10-01 ...

Page 7

Package Dimensions (Note) Note: This package is not available in Japan. Weight: 0.12 g (typ.) TC74HC00AP/AF/AFN 7 2007-10-01 ...

Page 8

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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