MB81E161622-10FH Fujitsu Microelectronics, Inc., MB81E161622-10FH Datasheet
MB81E161622-10FH
Manufacturer Part Number
MB81E161622-10FH
Description
Consumer Fcram
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
1.MB81E161622-10FH.pdf
(44 pages)
FUJITSU SEMICONDUCTOR
MEMORY
CMOS
2
SINGLE DATA RATE I/F FCRAM
Consumer
MB81E161622-10/-12
* : FCRAM is a trademark of Fujitsu Limited, Japan.
Clock Frequency @CL
Burst Mode Cycle Time
Access Time From Clock
RAS Cycle Time
Operating Current (I
Power Down Mode Current (I
Self-refresh Current (I
DESCRIPTION
The Fujitsu MB81E161622 is a Fast Cycle Random Access Memory (FCRAM*) containing 16,777,216 memory
cells accessible in a 16-bit format. The MB81E161622 features a fully synchronous operation referenced to a
positive edge clock, whereby all operations are synchronized at a clock input which enables high performance
and simple user interface coexistence.
The MB81E161622 is utilized using a Fujitsu advanced FCRAM core technology and designed to improve the
random access performance and the complexity of controlling regular synchronous DRAM (SDRAM) which require
many wait state due to long latency constraints.
The MB81E161622 is ideally suited for various embedded/consumer applications including digital AVs, printers
and file storage where a large band width memory is needed.
PRODUCT LINEUP
DATA SHEET
512 K
/
Embedded Application Specific Memory
Fast Cycle Random Access Memory (FCRAM) with Single Data Rate
CC1
Parameter
CC6
)
)
2
16 BIT
CC2P
)
CMOS 2-Bank
CL
CL
CL
CL
1
2
1
2
524,288-Word
100 MHz Max
130 mA Max
10 ns Max
15 ns Min
10 ns Min
30 ns Min
6 ns Max
-10
16 Bit
TM
MB81E161622
0.6 mA Max
0.6 mA Max
DS05-11403-2E
84 MHz Max
120 mA Max
14 ns Max
20 ns Min
12 ns Min
36 ns Min
7 ns Max
-12
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