mgf4935am Mitsumi Electronics, Corp., mgf4935am Datasheet

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mgf4935am

Manufacturer Part Number
mgf4935am
Description
Low Noise Gaas Fet
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

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DESCRIPTION
Transistor) is designed for use in S to Ku band amplifiers.
performance.
FEATURES
APPLICATION
QUALITY GRADE
RECOMMENDED BIAS CONDITIONS
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Tape & reel
V
Symbol
V
NFmin.
The MGF4935AM super-low noise HEMT (High Electron Mobility
The 4pin flat lead package is small-thin size, and offers high cost
Low noise figure
High associated gain
S to Ku band low noise amplifiers
GG
V
(BR)GDO
I
I
GS(off)
DS
GSS
DSS
Gs
Symbol
V
V
=2V , I
T
T
PT
GDO
GSO
I
stg
D
ch
NFmin. = 0.45dB (Typ.)
Gs = 12.0dB (Typ.)
D
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Associated gain
Minimum noise figure
=10mA
3000pcs/reel
May/2008
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Parameter
@ f=12GHz
Parameter
@ f=12GHz
(Ta=25°C )
Mitsubishi Electric Corporation puts the maximum effort into making
semiconductor products better and more reliable , but there is always the
possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury , fire or property damage. Remember to give due
consideration to safety when making your circuit designs , with appropriate
measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
(Ta=25°C )
MITSUBISHI
I
V
V
V
V
I
G
D
-55 to +125
GS
GS
DS
DS
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
=10mA,f=12GHz
=-10µA
Ratings
Test conditions
=2V,I
=-2V,V
=0V,V
=2V,
IDSS
125
50
-3
-3
D
DS
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
=500µA
DS
Keep Safety first in your circuit designs!
(1/6)
=2V
=0V
Unit
mW
mA
°C
°C
V
V
Outline Drawing
MITSUBISHI SEMICONDUTOR <GaAs FET>
MIN.
11.0
-3.5
-0.1
12
--
--
Fig.1
Limits
TYP.
12.0
0.45
--
--
--
--
MGF4935AM
MAX
0.65
-1.5
50
60
--
--
Unit
mA
µA
dB
dB
V
V

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mgf4935am Summary of contents

Page 1

... May/2008 DESCRIPTION The MGF4935AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. FEATURES Low noise figure @ f=12GHz NFmin. = 0.45dB (Typ.) High associated gain @ f=12GHz ...

Page 2

... May/2008 Fig.1 +0.1 0.30 -0.05 ② Top ③ +0.1 0.40 -0.05 Side ③ Bottom ② MITSUBISHI SEMICONDUTOR <GaAs FET> SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) 2.10 ±0.1 1.30 1.30 ±0.05 (0.65) (0.65) (0.65) +0.1 0.30 -0.05 ① ② +0.1 0.30 -0.05 (0.60) (0.60) (0.65) 1.25 1.25 ±0.05 ② ① MITSUBISHI (2/6) MGF4935AM +0.05 0.11 -0 Unit: mm ① Gate ② Source ③ Drain (GD-30) ...

Page 3

... Drain current, ID (mA) SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) (Ta=25°C) (V =~0.1V/STEP ( MITSUBISHI (3/6) MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4935AM I vs =2V -1.0 -0.5 Gate to Souce voltage 0.0 (V) ...

Page 4

... Ta=room temperature) D Γ opt Rn Reference point (ang) (Ω) 3.1 18.0 8.3 16.5 14.9 15.0 20.4 13.5 30.4 12.0 41.5 10.5 52.7 9.0 68.0 7.0 83.3 5.5 99.7 4.0 117.8 3.0 137.8 2.5 162.0 2.5 -178.1 2.5 MITSUBISHI (4/6) MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4935AM S22 (ang) (mag) (ang) 80.2 0.669 -10.6 71.6 0.658 -21.3 62.7 0.636 -31.2 54.6 0.603 -41.8 46.8 0.569 -51.7 39.3 0.529 -61.1 33.2 0.488 -69.7 28.2 0.446 -77.6 24.0 0.404 -84.9 20.9 0.368 -91.9 19.0 0.338 -99.5 16.9 0.320 -109.4 13.2 0.303 -120 ...

Page 5

... MITSUBISHI (5/6) MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4935AM S12 S22 (ang) (mag) (ang) 96.6 0.648 168.2 100.0 0.648 156.5 98.7 0.652 144.6 94.7 0.664 133.1 87.8 0.674 121.4 79.7 0.682 109.6 69.1 0.693 97.9 58.2 0.706 87.1 45.8 0.717 76 ...

Page 6

... The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. MITSUBISHI SEMICONDUTOR <GaAs FET> SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) MITSUBISHI (6/6) MGF4935AM ...

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