mgf4935am Mitsumi Electronics, Corp., mgf4935am Datasheet - Page 3

• Manufacturer Part Number: mgf4935am
• Description: Low Noise Gaas Fet
• Manufacturer: Mitsumi Electronics, Corp.

TYPICAL CHARACTERISTICS
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
May/2008
0
0
Ta=25 ℃
V
f=12GHz
DS
Drain to Source voltage, V
=2V
Gs
NF
I
D
vs. V
Drain current, ID (mA)
1
5
NF & Gs vs. I
DS
10
(V
2
GS
=~0.1V/STEP)
(Ta=25°C)
D
3
15
MITSUBISHI
DS
(V)
4
20
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
(3/6)
15
14
13
12
11
10
9
8
7
6
5
4
50
40
30
20
10
0
-1.0
MITSUBISHI SEMICONDUTOR <GaAs FET>
I
D
Gate to Souce voltage, V
vs. V
GS
-0.5
MGF4935AM
(V
DS
=2V)
GS
(V)
0.0