LT1162 LINER [Linear Technology], LT1162 Datasheet - Page 3

no-image

LT1162

Manufacturer Part Number
LT1162
Description
Half-/Full-Bridge N-Channel Power MOSFET Drivers
Manufacturer
LINER [Linear Technology]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LT1162CS
Manufacturer:
LT
Quantity:
10
Part Number:
LT1162CSW
Manufacturer:
LINEAR/凌特
Quantity:
20 000
Part Number:
LT1162CSW#PBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
Part Number:
LT1162CSW#TRPBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
Part Number:
LT1162ISW#PBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
Part Number:
LT1162ISW#TRPBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
I
V
V
V
t
t
t
t
t
t
The
temperature range.
Note 1: For the LT1160, Pins 1, 10 should be connected together. For the
LT1162, Pins 1, 7, 14, 20 should be connected together.
Note 2: T
dissipation P
Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
SYMBOL PARAMETER
UVOUT
r
f
D1
D2
D3
D4
UVOUT
OH
OL
LT1160CN/LT1160IN: T
LT1160CS/LT1160IS: T
LT1162CN/LT1162IN: T
LT1162CS/LT1162IS: T
denotes specifications which apply over the full operating
J
Undervoltage Output Leakage
Undervoltage Output Saturation
Top Gate ON Voltage
Bottom Gate ON Voltage
Top Gate OFF Voltage
Bottom Gate OFF Voltage
Top Gate Rise Time
Bottom Gate Rise Time
Top Gate Fall Time
Bottom Gate Fall Time
Top Gate Turn-On Delay
Bottom Gate Turn-On Delay
Top Gate Turn-Off Delay
Bottom Gate Turn-Off Delay
Top Gate Lockout Delay
Bottom Gate Lockout Delay
Top Gate Release Delay
Bottom Gate Release Delay
is calculated from the ambient temperature T
D
according to the following formulas:
J
J
J
J
= T
= T
= T
= T
A
A
A
A
+ (P
+ (P
+ (P
+ (P
D
D
D
D
)(110 C/W)
)(80 C/W)
)(70 C/W)
)(58 C/W)
A
and power
V
V
V
V
V
V
V
Measured at V
V
Measured at V
V
Measured at V
V
Measured at V
V
Measured at V
V
Measured at V
V
Measured at V
V
Measured at V
V
Measured at V
V
Measured at V
V
Measured at V
V
Measured at V
CONDITIONS
INTOP
INTOP
INTOP
INTOP
INTOP
INBOTTOM
INTOP
INBOTTOM
INTOP
INBOTTOM
INTOP
INBOTTOM
INBOTTOM
INTOP
INBOTTOM
INTOP
+
+
= 15V
= 7.5V, I
Test Circuit, T
= 2V, V
= 0.8V, V
= 0.8V, V
= 2V, V
(+) Transition, V
(–) Transition, V
(+) Transition, V
(–) Transition, V
(+) Transition, V
(–) Transition, V
(+) Transition, V
(–) Transition, V
(+) Transition, V
(–) Transition, V
(+) Transition, V
(–) Transition, V
UVOUT
TGATE DR
BGATE DR
TGATE DR
BGATE DR
TGATE DR
BGATE DR
TGATE DR
BGATE DR
TGATE DR
BGATE DR
TGATE DR
BGATE DR
INBOTTOM
INBOTTOM
INBOTTOM
INBOTTOM
= 2.5mA
Note 3: I
I
higher due to the gate charge being delivered at the switching frequency.
See Typical Performance Characteristics and Applications Information
sections. The LT1160 = 1/2 LT1162.
Note 4: See Timing Diagram. Gate rise times are measured from 2V to 10V
and fall times are measured from 10V to 2V. Delay times are measured
from the input transition to when the gate voltage has risen to 2V or
decreased to 10V.
BOOST
A
INBOTTOM
(Note 4)
(Note 4)
INBOTTOM
(Note 4)
(Note 4)
INBOTTOM
(Note 4)
(Note 4)
INBOTTOM
(Note 4)
(Note 4)
(Note 4)
INBOTTOM
(Note 4)
(Note 4)
INBOTTOM
(Note 4)
= 25 C, V
= 0.8V
= 0.8V
= 2V
= 2V
is the current through the Boost pin. Dynamic supply current is
INTOP
INTOP
INTOP
INTOP
INTOP
INTOP
S
is the sum of currents through SV
= 0.8V,
= 0.8V,
= 0.8V,
= 0.8V,
= 0.8V,
= 0.8V,
= 0.8V,
= 0.8V,
= 2V,
= 2V,
= 2V,
= 2V,
+
= V
BOOST
= 12V, V
TSOURCE
MIN
11
11
LT1160/LT1162
+
, PV
11.3
11.3
= 0V, C
TYP
130
250
200
300
200
300
250
250
200
0.1
0.2
0.4
0.4
90
60
60
+
and Boost pins.
MAX
GATE
200
200
140
140
500
400
600
400
600
500
500
400
0.4
0.7
0.7
12
12
5
= 3000pF.
UNITS
3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
V
V
V
V
V

Related parts for LT1162