VTT1017 PERKINELMER [PerkinElmer Optoelectronics], VTT1017 Datasheet

VTT1017

Manufacturer Part Number

VTT1017

Description

.050 NPN Phototransistors

Manufacturer

PERKINELMER [PerkinElmer Optoelectronics]

Datasheet

1.VTT1017.pdf (1 pages)

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PRODUCT DESCRIPTION

A large area high sensitivity NPN silicon phototransistor in

a flat lensed, hermetically sealed, TO-46 package. The

hermetic package offers superior protection from hostile

environments. The base connection is brought out

allowing conventional transistor biasing. These devices

are spectrally matched to the VTE10xx series of IREDs.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

Part Number

.050" NPN Phototransistors

TO-46 Flat Window Package

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Refer to General Product Notes, page 2.

VTT1015

VTT1016

VTT1017

Min.

0.4

1.0

2.5

Max.

Light Current

—

fc (mW/cm

100 (5)

= 5.0 V

)

PACKAGE DIMENSIONS

Max.

(nA)

Dark Current

H = 0

CEO

(Volts)

ABSOLUTE MAXIMUM RATINGS

(@ 25°C unless otherwise noted)

Maximum Temperatures

Continuous Power Dissipation:

Maximum Current:

Lead Soldering Temperature:

Breakdown

Volts, Min.

Collector

= 100 µA

BR(CEO)

102

H = 0

Storage Temperature:

Operating Temperature:

Derate above 30°C:

(1.6 mm from case, 5 sec. max.)

(See also typical curves, pages 91-92)

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

CASE 1 TO-46 (FLAT WINDOW)

Breakdown

Volts, Min.

Emitter

= 100 µA

BR(ECO)

H = 0

inch (mm)

6.0

4.0

CHIP TYPE: 50T

VTT1015, 16, 17

Volts, Max.

Saturation

H = 400 fc

Voltage

= 1.0 mA

CE(SAT)

0.40

Rise/Fall Time

µsec, Typ.

= 1.0 mA

= 100

5.0

8.0

-40°C to 110°C

250 mW

3.12 mW/°C

200 mA

260°C

Response

Angular

±35°

Typ.

1/2

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