VTT1227 PERKINELMER [PerkinElmer Optoelectronics], VTT1227 Datasheet

VTT1227

Manufacturer Part Number

VTT1227

Description

.025 NPN Phototransistors

Manufacturer

PERKINELMER [PerkinElmer Optoelectronics]

Datasheet

1.VTT1227.pdf (1 pages)

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PRODUCT DESCRIPTION

A small area high speed NPN silicon phototransistor

mounted in a 5 mm diameter lensed, end looking,

transparent plastic package. Detectors in this series have

a half power acceptance angle (

are spectrally and mechanically matched to the VTE12xx

series of IREDs.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

Part Number

.025" NPN Phototransistors

Clear T-1¾ (5 mm) Plastic Package

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Refer to General Product Notes, page 2.

VTT1225

VTT1226

VTT1227

Min.

12.0

4.0

7.5

Max.

Light Current

—

fc (mW/cm

1/2

100 (5)

) of 5°. These devices

= 5.0 V

)

PACKAGE DIMENSIONS

Max.

(nA)

Dark Current

100

H = 0

CEO

(Volts)

ABSOLUTE MAXIMUM RATINGS

(@ 25°C unless otherwise noted)

Maximum Temperatures

Continuous Power Dissipation:

Maximum Current:

Lead Soldering Temperature:

Breakdown

Volts, Min.

Collector

= 100 µA

BR(CEO)

H = 0

Storage Temperature:

Operating Temperature:

Derate above 30°C:

(1.6 mm from case, 5 sec. max.)

(See also typical curves, pages 91-92)

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

Breakdown

Volts, Min.

Emitter

= 100 µA

BR(ECO)

H = 0

CASE 26 T-1¾ (5 mm)

inch (mm)

5.0

CHIP TYPE: 25T

VTT1225, 26, 27

Volts, Max.

H = 400 fc

Saturation

Voltage

= 1.0 mA

CE(SAT)

0.25

Rise/Fall Time

µsec, Typ.

= 1.0 mA

= 100

1.5

3.0

4.0

-40°C to 100°C

50 mW

0.71 mW/°C

25 mA

260°C

Response

Angular

Typ.

±5°

1/2

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