M29W320E ST Microelectronics, M29W320E Datasheet - Page 12

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M29W320E

Manufacturer Part Number
M29W320E
Description
32 Mbit (4Mb x8 or 2Mb x16 / Boot Block) 3V Supply Flash Memory
Manufacturer
ST Microelectronics
Datasheet

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M29W320ET, M29W320EB
BUS OPERATIONS
There are five standard bus operations that control
the device. These are Bus Read, Bus Write, Out-
put Disable, Standby and Automatic Standby.
See
summary. Typically glitches of less than 5ns on
Chip Enable or Write Enable are ignored by the
memory and do not affect bus operations.
Bus Read. Bus Read operations read from the
memory cells, or specific registers in the Com-
mand Interface. A valid Bus Read operation in-
volves setting the desired address on the Address
Inputs, applying a Low signal, V
and Output Enable and keeping Write Enable
High, V
value, see
and
tails of when the output becomes valid.
Bus Write. Bus Write operations write to the
Command Interface. A valid Bus Write operation
begins by setting the desired address on the Ad-
dress Inputs. The Address Inputs are latched by
the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs are latched by the Com-
mand Interface on the rising edge of Chip Enable
or Write Enable, whichever occurs first. Output En-
able must remain High, V
Write operation. See
Write AC Waveforms, and
14., Write AC Characteristics, for details of the tim-
ing requirements.
Output Disable. The Data Inputs/Outputs are in
the high impedance state when Output Enable is
High, V
Standby. When Chip Enable is High, V
memory enters Standby mode and the Data In-
puts/Outputs pins are placed in the high-imped-
ance state. To reduce the Supply Current to the
Standby Supply Current, I
12/46
Table 2.
Table 12., Read AC
IH
IH
. The Data Inputs/Outputs will output the
.
Figure 11., Read Mode AC
and
Table
Figure 12.
3., Bus Operations, for a
IH
CC2
Characteristics, for de-
, during the whole Bus
Table 13.
, Chip Enable should
IL
, to Chip Enable
and
Waveforms,
Figure
and
IH
Table
, the
13.,
be held within V
level see
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, I
til the operation completes.
Automatic Standby. If CMOS levels (V
are used to drive the bus and the bus is inactive for
300ns or more the memory enters Automatic
Standby where the internal Supply Current is re-
duced to the Standby Supply Current, I
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus opera-
tions are intended for use by programming equip-
ment and are not usually used in applications.
They require V
Electronic Signature. The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in
Block Protect and Chip Unprotect. Groups
blocks can be protected against accidental Pro-
gram or Erase. The Protection Groups are shown
in
Addresses. The whole chip can be unprotected to
allow the data inside the blocks to be changed.
The V
the two outermost boot blocks. When V
Protect is at V
protected and remain protected regardless of the
Block Protection Status or the Reset/Block Tem-
porary Unprotect pin status.
Block Protect and Chip Unprotect operations are
described in
APPENDIX
PP
Table 2.
/Write Protect pin can be used to protect
CC3
Table 11., DC
APPENDIX D.
, for Program or Erase operations un-
IL
A.,
ID
CC
the two outermost boot blocks are
and
to be applied to some pins.
Table 20.
± 0.2V. For the Standby current
Table
Characteristics.
3., Bus Operations.
and
Table
CC
21., Block
CC2
PP
± 0.2V)
/Write
. The
of

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