CY7C1355C-100BZC CYPRESS [Cypress Semiconductor], CY7C1355C-100BZC Datasheet

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CY7C1355C-100BZC

Manufacturer Part Number
CY7C1355C-100BZC
Description
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Cypress Semiconductor Corporation
Document #: 38-05688 Rev. *D
Features
Note:
Logic Block Diagram–CY7C1379C (256K x 36)
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
• Can support up to 133-MHz bus operations with zero
• Pin compatible and functionally equivalent to ZBT™
• Internally self-timed output buffer control to eliminate
• Registered inputs for flow-through operation
• Byte Write capability
• 256K x 32 common I/O architecture
• Single 3.3V power supply (V
• Fast clock-to-output times
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• Available in JEDEC-standard lead-free 100-Pin TQFP,
• Burst Capability—linear or interleaved burst order
• Low standby power
CEN
CLK
wait states
— Data is transferred on every clock
devices
the need to use OE
— 6.5 ns (for 133-MHz device)
lead-free and non lead-free 165-Ball FBGA package
A0, A1, A
ADV/LD
MODE
BW
BW
BW
BW
C
WE
CE1
CE2
CE3
ZZ
OE
A
D
B
C
CE
DD
REGISTER
ADDRESS
)
READ LOGIC
SLEEP
Control
WRITE ADDRESS
AND DATA COHERENCY
REGISTER
WRITE REGISTRY
CONTROL LOGIC
ADV/LD
198 Champion Court
9-Mbit (256K x 32) Flow-through SRAM
C
A0
A1
D1
D0
BURST
LOGIC
Functional Description
The CY7C1379C is a 3.3V, 256K x 32 Synchronous
Flow-through Burst SRAM designed specifically to support
unlimited true back-to-back Read/Write operations without the
insertion of wait states. The CY7C1379C is equipped with the
advanced No Bus Latency™ (NoBL™) logic required to
enable consecutive Read/Write operations with data being
transferred on every clock cycle. This feature dramatically
improves the throughput of data through the SRAM, especially
in systems that require frequent Write-Read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
Write operations are controlled by the two Byte Write Select
(BW
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
Q1
Q0
A0'
A1'
[A:D]
DRIVERS
WRITE
) and a Write Enable (WE) input. All writes are
San Jose
with NoBL™ Architecture
MEMORY
ARRAY
,
CA 95134-1709
REGISTER
INPUT
[1]
M
N
A
S
E
S
E
P
S
E
Revised September 14, 2006
D
A
T
A
T
E
E
R
N
G
S
I
1
, CE
CY7C1379C
2
O
U
T
P
U
T
B
U
E
R
F
F
S
, CE
E
408-943-2600
3
) and an
DQs

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CY7C1355C-100BZC Summary of contents

Page 1

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to ...

Page 2

Selection Guide Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Pin Configurations DDQ BYTE ...

Page 3

Pin Configurations (continued NC/576M A B NC/1G A CE2 DDQ DDQ DDQ DDQ ...

Page 4

Pin Definitions (continued) Name TQFP FBGA OE 86 CEN 52,53,56,57, M11,L11, s 58,59,62,63, K11,J11, 68,69,72,73, J10,K10, 74,75,78,79, L10,M10, 2,3,6,7, D10,E10, 8,9,12,13, F10,G10, 18,19,22,23, D11,E11, 24,25,28,29 F11,G11, D1,E1,F1, G1,D2,E2, F2,G2,J1, K1,L1,M1, J2,K2,L2 Mode 31 V 15,41,65,91 D4,D8,E4, ...

Page 5

Pin Definitions (continued) Name TQFP FBGA V 5,10,17,21, C4,C5,C6, SS 26,40,55,60, C7,C8,D5, 67,71,76,90, D6,D7,E5, E6,E7,F5, F6,F7,G5, G6,G7,H5, H6,H7,J5, J6,J7,K5,K6,K 7,L5,L6,L7,M5 ,M6,M7, N4,N8 NC 1,16,30,38,39, A1,A11,B1, 42,43,51,66,80,8 B9,B11,C1, 4,95,96 C2,C10,C11,H 1,H3,H9, H10,N1,N2, N5,N6,N7 N10,N11,P1,P 2,P5,P7, P11,R2,R5, V /DNU 14 SS Functional ...

Page 6

On the next clock rise the data presented to DQs (or a subset for Byte Write operations, see Truth Table for details) inputs is latched into the device and the write is complete. Additional accesses (Read/Write/Deselect) can be initiated on ...

Page 7

Truth Table ADRESS Operation Deselect Cycle Deselect Cycle Deselect Cycle Continue Deselect Cycle READ Cycle (Begin Burst) External READ Cycle (Continue Burst) NOP/DUMMY READ (Begin Burst) External DUMMY READ (Continue Burst) WRITE Cycle ...

Page 8

Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on V Relative to GND........ –0.5V to +4.6V ...

Page 9

Capacitance Parameter Description C Input Capacitance IN C Clock Input Capacitance CLOCK C I/O Capacitance I/O [11] Thermal Resistance Parameters Description Θ Thermal Resistance JA (Junction to Ambient) Θ Thermal Resistance JC (Junction to Case) AC Test Loads and ...

Page 10

Switching Characteristics Over the Operating Range Parameter Set-up Times t Address Set-up before CLK Rise AS t ADV/LD Set-up before CLK Rise ALS t WE, BW Set-up before CLK Rise WES [A:D] t CEN Set-up before CLK Rise CENS t ...

Page 11

Switching Waveforms [18, 19, 20] Read/Write Waveforms CYC CLK t CENS t CENH t CH CEN t CES t CEH CE ADV/ [A: ADDRESS D(A1 ...

Page 12

Switching Waveforms (continued) [18, 19, 21] NOP, STALL and Deselect Cycles 1 2 CLK CEN CE ADV/ [A: ADDRESS D(A1) DQ COMMAND WRITE READ D(A1) Q(A2) [22, 23] ZZ Mode Timing CLK ...

Page 13

... Fine-Pitch Ball Grid Array ( 1.2 mm) CY7C1355C-133BZXI 100 CY7C1355C-100AXC 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1355C-100BZC 51-85122 165-ball Fine-Pitch Ball Grid Array ( 1.2 mm) CY7C1355C-100BZXC CY7C1355C-100AXI 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1355C-100BZI 51-85122 165-ball Fine-Pitch Ball Grid Array ( ...

Page 14

Package Diagrams (continued) 165-ball FBGA ( 1.2 mm) (51-85122) NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology, Inc. All product and company names mentioned in this ...

Page 15

Document History Page Document Title: CY7C1379C 9-Mbit (256K x 32) Flow-through SRAM with NoBL™ Architecture Document Number: 38-05688 REV. ECN NO. Issue Date ** 286269 See ECN *A 320834 See ECN *B 377095 See ECN *C 408725 See ECN *D ...

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