LH28F160S5-L SHARP [Sharp Electrionic Components], LH28F160S5-L Datasheet - Page 38

• Manufacturer Part Number: LH28F160S5-L
• Description: 16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)
• Manufacturer: SHARP [Sharp Electrionic Components]

NOTES :
1. All currents are in RMS unless otherwise noted. Typical
2. I
3. Includes STS.
6.2.3 DC CHARACTERISTICS (contd.)
SYMBOL
V
V
V
V
V
V
V
V
IL
IH
OL
OH1
OH2
PPLK
PPH1
LKO
values at nominal V
currents are valid for all product versions (packages and
speeds).
selected. If reading or (multi) word/byte writing in erase
suspend mode, the device’s current draw is the sum of
I
CCWS
CCWS
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
(TTL)
Output High Voltage
(CMOS)
V
Normal Operations
V
Operations
V
or I
PP
PP
CC
and I
CCES
Lockout Voltage during
Voltage during Write or Erase
Lockout Voltage
CCES
and I
PARAMETER
are specified with the device de-
CC
CCR
voltage and T
or I
CCW
, respectively.
A
= +25°C. These
NOTE
3, 7
3, 7
3, 7
4, 7
7
7
- 38 -
–0.5
–0.4
0.85
MIN.
V
V
V
2.0
2.4
4.5
2.0
CC =
CC
CC
4. Block erases, full chip erases, (multi) word/byte writes
5. Automatic Power Saving (APS) reduces typical I
6. CMOS inputs are either V
7. Sampled, not 100% tested.
5.0±0.5 V
and block lock-bit configurations are inhibited when V
≤ V
V
1 mA at 5 V V
inputs are either V
PPLK
MAX.
+0.5
0.45
V
PPLK
0.8
1.5
5.5
CC
(max.) and V
, and not guaranteed in the range between
UNIT
CC
V
V
V
V
V
V
V
V
V
in static operation.
IL
PPH1
V
I
V
I
V
I
V
I
or V
OL
OH
OH
OH
CC
CC
CC
CC
= 5.8 mA
(min.) and above V
= –2.5 mA
= –2.5 mA
= –100 µA
IH
= V
= V
= V
= V
CC
LH28F160S5-L/S5H-L
.
±0.2 V or GND±0.2 V. TTL
CC
CC
CC
CC
CONDITIONS
Min.
Min.
Min.
Min.
TEST
PPH1
(max.).
CCR
PP
to