HM27 HSMC [Hi-Sincerity Mocroelectronics], HM27 Datasheet

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HM27

Manufacturer Part Number
HM27
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
HSMC [Hi-Sincerity Mocroelectronics]
Datasheet

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HM27
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington transistor.
Absolute Maximum Ratings
Characteristics
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ...................................................................................... 1 W
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCES Collector to Emitter Voltage...................................................................................... 60 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current ...................................................................................................... 500 mA
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
*VCE(sat)
VBE(on)
BVCBO
BVCES
BVEBO
Symbol
*hFE1
*hFE2
ICBO
IEBO
ICES
Min.
10K
10K
60
60
10
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
100
100
500
1.5
2
-
-
-
-
-
Unit
nA
nA
nA
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=100uA
IC=100uA
IE=10uA
VCB=50V
VBE=10V
VCE=50V
VCE=5V, IC=100mA
VCE=5V, IC=10mA
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
Test Conditions
Spec. No. :HE9517-B
Issued Date : 1997.06.06
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification

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HM27 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ...................................................................................... 1 W Maximum Voltages and Currents (Ta=25 C) VCBO Collector to Base Voltage ........................................................................................ 60 V VCES Collector to Emitter Voltage...................................................................................... 60 V VEBO Emitter to Base Voltage ...

Page 2

HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100000 10000 1000 1 10 Collector Current (mA) On Voltage & Collector Current BE(on) 0.1 0.01 0.1 1 Collector Current (mA) Safe Operating Area 10000 ...

Page 3

HI-SINCERITY MICROELECTRONICS CORP. SOT-89 Dimension Inches DIM Min. Max. A 0.1732 0.1811 B 0.1594 0.1673 C 0.0591 0.0663 D 0.0945 0.1024 E 0.0141 0.0201 Notes : 1.Dimension and tolerance based on ...

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