HM2222A HSMC [Hi-Sincerity Mocroelectronics], HM2222A Datasheet

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HM2222A

Manufacturer Part Number
HM2222A
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
HSMC [Hi-Sincerity Mocroelectronics]
Datasheet

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HM2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM2222A is designed for general purpose amplifier and high
speed, medium-power switching applications.
Features
Absolute Maximum Ratings
Characteristics
HM2222A
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature .................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) .................................................................................... 1.2 W
VCBO Collector to Base Voltage ......................................................................................... 75 V
VCES Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
Low collector saturation voltage
High speed switching
For complementary use with PNP type HPN2907A
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
BVCBO
BVCEO
BVEBO
Symbol
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
ICBO
IEBO
ICEX
fT
Min.
100
300
75
40
35
50
75
40
50
6
-
-
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
300
300
1.2
10
10
50
1
2
-
-
-
-
-
-
-
-
-
MHz
Unit
mV
nA
nA
nA
V
V
V
V
V
V
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
IC=10uA
IC=10mA
IE=10uA
VCB=60V
VCB=60V, VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
VCE=20V, IC=20mA, f=100MHz
Test Conditions
Spec. No. :HE9521
Issued Date : 1997.06.18
Revised Date : 2002.04.10
Page No. : 1/4
HSMC Product Specification
SOT-89

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HM2222A Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features Low collector saturation voltage High speed switching For complementary use with PNP type HPN2907A Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...

Page 2

... Collector Current-I Saturation Voltage & Collector Current 10000 V BE(s at =10I B 75 1000 125 C 100 0 Collector Current-I HM2222A 1000 C 100 100 1000 (mA) C 10000 100 1000 (mA) C 100 100 1000 (mA) C Spec. No. :HE9521 Issued Date : 1997 ...

Page 3

... HI-SINCERITY MICROELECTRONICS CORP. Cutoff Frequency & IC 1000 V =20V CE 100 Collector Current (mA) HM2222A 10000 1000 100 10 1 100 1000 Spec. No. :HE9521 Issued Date : 1997.06.18 Revised Date : 2002.04.10 Page No. : 3/4 Safe Operating Area P =1ms =100ms P = Forward Biased Voltage-V (V) CE HSMC Product Specification ...

Page 4

... Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM2222A H D Style: Pin 1.Base 2.Collector 3.Emitter ...

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