STM8500 SAMHOP [SamHop Microelectronics Corp.], STM8500 Datasheet

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STM8500

Manufacturer Part Number
STM8500
Description
Dual E nhancement Mode Field Effect Transistor (N and P Channel)
Manufacturer
SAMHOP [SamHop Microelectronics Corp.]
Datasheet

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S amHop Microelectronics C orp.
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
THE R MAL C HAR AC TE R IS TIC S
Drain-S ource Diode Forward C urrent
P R ODUC T S UMMAR Y
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
ABS OLUTE MAXIMUM R ATINGS (T
Drain C urrent-C ontinuous @ Ta
V
Thermal R esistance, Junction-to-Ambient
55V
Gate-S ource Voltage
Drain-S ource Voltage R ating
Drain-S ource Voltage
DS S
4.5A
I
D
P arameter
S O-8
-P ulsed
R
DS (ON) ( m
75 @ V
50 @ V
1
b
a
(N-C hannel)
a
G S
G S
W
= 10V
= 4.5V
Ta= 25 C
a
) Max
Ta=70 C
25 C
70 C
a
A
1
=25 C unless otherwise noted)
R
T
S ymbol
Vspike
J
V
, T
V
I
JA
DM
I
P
I
GS
DS
S
D
D
S TG
P R ODUC T S UMMAR Y
V
-55V
DS S
d
N-C hannel P-C hannel
D
S
8
1
1
1
4.5
3.8
1.7
60
55
20
20
-3A
S T M8500
D
G
7
2
-55 to 150
I
D
1
1
1.44
62.5
D
S
6
3
2
2
2
D
G
5
4
-1.7
-2.5
R
-60
-55
-15
2
-3
2
20
DS (ON) ( m
Arp,20 2005 ver1.2
110 @ V
145 @ V
(P -C hannel)
G S
G S
Unit
W
C
= -10V
= -4.5V
V
A
V
V
A
A
W
A
/W
C
) Max

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STM8500 Summary of contents

Page 1

S amHop Microelectronics C orp. Dual E nhancement Mode Field E ffect Transistor ( N and P Channel ODUC T S UMMAR (ON 55V 4.5A ...

Page 2

S T M8500 N-Channel ELECTRICAL CHARACTERISTICS (T Parameter OFF CHAR ACTE R IS TICS 5 Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS Gate Threshold Voltage Drain-S ource On-S tate R ...

Page 3

S T M8500 P-Channel ELECTRICAL CHARACTERISTICS (T Parameter OFF CHAR ACTE R IS TICS 5 Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS Gate Threshold Voltage Drain-S ource On-S tate R ...

Page 4

S T M8500 ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300μs, Duty Cycle 2%. < c.Guaranteed by design, not subject to production testing. d.Guaranteed when external ...

Page 5

S T M8500 N-C hannel 1.6 V 1.4 I 1.2 1.0 0.8 0.6 0.4 -50 - 100 125 150 unction T emperature ( igur ate T hr ...

Page 6

S T M8500 P-C hannel =10,9,8,7, Drain-to-S ource Voltage ( igure 1. Output C har acter istics 1200 1000 800 600 ...

Page 7

S T M8500 P-C hannel 1 1.2 1.0 0.8 0.6 0.4 -50 - 100 125 150 unction T emperature ( igur ate T ...

Page 8

S T M8500 N-C hannel 10 V =30V =4. otal G ate C harge ( igur e 9. ...

Page 9

S T M8500 igure 11. S witching ircuit N-C hannel 10 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 0.00001 ...

Page 10

S T M8500 PAC OUT LINE DIME NS IONS S O 0.015X45° 0.016 TYP. 0.05 TYP OLS 0.008 TYP. H MILLIME T E ...

Page 11

SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 5.20 2.10 6.40 150㏕ SO-8 Reel UNIT:㎜ REEL SIZE TAPE SIZE M 330 12 ㎜ ψ330 ± 1 SO-8 Tape and Reel Data ψ1.5 12.0 ...

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