STM8500 SAMHOP [SamHop Microelectronics Corp.], STM8500 Datasheet - Page 4

• Manufacturer Part Number: STM8500
• Description: Dual E nhancement Mode Field Effect Transistor (N and P Channel)
• Manufacturer: SAMHOP [SamHop Microelectronics Corp.]

S T M8500
ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300μs, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external Rg=6 ohm and tf < tf max
N-Channel
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
Parameter
1500
1250
1000
750
500
250
20
16
12
8
4
0
0
0
0
Figure 1. Output Characteristics
Crss
V
V
2
DS
DS
5
＜
Figure 3. Capacitance
V
, Drain-to-Source Voltage (V)
, Drain-to Source Voltage (V)
GS
=10,9,8,7,6,5V
4
10
＜
15
6
20
8
＜
A
=25 C unless otherwise noted)
Symbol
V
V
GS
GS
10
25
=4V
V
=3V
SD
Coss
Ciss
b
12
30
4
V
V
GS
GS
= 0V, Is =1.7A
= 0V, Is =-1.7A
Condition
2.2
1.8
1.4
1.0
0.8
0.4
25
20
15
10
Figure 4. On-Resistance Variation with
0
5
0
-50
0
Figure 2. Transfer Characteristics
-25
V
I
Drain Current and Temperature
D
G S
0.8
=4.5A
V
=10V
GS
0
, Gate-to-Source Voltage (V)
I
1.6
D
N-Ch
P-Ch
Tj=125 C
25
, Drain Current(A)
25 C
50
2.4
Min Typ Max Unit
75
3.2
100
-55 C
-0.84
0.82
4.0
125
Tj=( C )
C
150
4.8
-1.2
1.2
V
5